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SST39V800A-70-4C-C1QE

更新时间： 2024-11-10 11:53:47
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美国微芯 - MICROCHIP 闪存
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37页 4104K
描述
2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash

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SST39V800A-70-4C-C1QE 数据手册

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2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash  
SST39LF200A / SST39LF400A / SST39LF800A  
SST39VF200A / SST39VF400A / SST39VF800A  
A Microchip Technology Company  
Data Sheet  
The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K  
x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with  
SST proprietary, high-performance CMOS SuperFlash technology. The split-gate  
cell design and thick oxide tunneling injector attain better reliability and manufac-  
turability compared with alternate approaches. The SST39LF200A/400A/800A  
write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/  
800A write (Program or Erase) with a 2.7-3.6V power supply. These devices con-  
form to JEDEC standard pinouts for x16 memories.  
Features:  
• Organized as 128K x16 / 256K x16 / 512K x16  
• Fast Erase and Word-Program  
– Sector-Erase Time: 18 ms (typical)  
– Block-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 70 ms (typical)  
– Word-Program Time: 14 µs (typical)  
– Chip Rewrite Time:  
2 seconds (typical) for SST39LF/VF200A  
4 seconds (typical) for SST39LF/VF400A  
8 seconds (typical) for SST39LF/VF800A  
• Single Voltage Read and Write Operations  
– 3.0-3.6V for SST39LF200A/400A/800A  
– 2.7-3.6V for SST39VF200A/400A/800A  
• Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
• Automatic Write Timing  
• Low Power Consumption  
(typical values at 14 MHz)  
– Internal VPP Generation  
– Active Current: 9 mA (typical)  
• End-of-Write Detection  
– Standby Current: 3 µA (typical)  
– Toggle Bit  
– Data# Polling  
• Sector-Erase Capability  
– Uniform 2 KWord sectors  
• CMOS I/O Compatibility  
• Block-Erase Capability  
• JEDEC Standard  
– Uniform 32 KWord blocks  
– Flash EEPROM Pinouts and command sets  
• Fast Read Access Time  
• Packages Available  
– 55 ns for SST39LF200A/400A/800A  
– 70 ns for SST39VF200A/400A/800A  
– 48-lead TSOP (12mm x 20mm)  
– 48-ball TFBGA (6mm x 8mm)  
– 48-ball WFBGA (4mm x 6mm)  
• Latched Address and Data  
– 48-bump XFLGA (4mm x 6mm) – 4 and 8Mbit  
• All non-Pb (lead-free) devices are RoHS compliant  
www.microchip.com  
©2011 Silicon Storage Technology, Inc.  
DS25001A  
03/11  
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