Datasheet > SST37VF010-70-3C-NH

SST37VF010-70-3C-NH

更新时间： 2024-11-18 22:13:39

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16页	166K
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash

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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8)

Many-Time Programmable Flash

SST37VF512 / SST37VF010 / SST37VF020 / SST37VF040

SST37VF512 / 010 / 020 / 0402.7V-Read 512Kb / 1Mb / 2Mb / 4Mb (x8) MTP flash memories

Data Sheet

FEATURES:

•

Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8

2.7-3.6V Read Operation

•

Fast Byte-Program Operation:

– Byte-Program Time: 10 µs (typical)

– Chip Program Time:

Superior Reliability

0.6 seconds (typical) for SST37VF512

1.2 seconds (typical) for SST37VF010

2.4 seconds (typical) for SST37VF020

4.8 seconds (typical) for SST37VF040

– Endurance: At least 1000 Cycles

– Greater than 100 years Data Retention

•

Low Power Consumption:

– Active Current: 10 mA (typical)

– Standby Current: 2 µA (typical)

Electrical Erase Using Programmer

– Does not require UV source

– Chip-Erase Time: 100 ms (typical)

Fast Read Access Time:

– 70 ns

– 90 ns

•

CMOS I/O Compatibility

JEDEC Standard Byte-wide Flash

EEPROM Pinouts

Latched Address and Data

•

Packages Available

– 32-pin PLCC

– 32-pin TSOP (8mm x 14mm)

– 32-pin PDIP

PRODUCT DESCRIPTION

The SST37VF512/010/020/040 devices are 64K x8 / 128K

x8 / 256K x8 / 512K x8 CMOS, Many-Time Programmable

(MTP), low cost flash, manufactured with SST’s proprietary,

high performance CMOS SuperFlash technology. The

split-gate cell design and thick oxide tunneling injector

attain better reliability and manufacturability compared with

alternate approaches. The SST37VF512/010/020/040 can

be electrically erased and programmed at least 1000 times

using an external programmer, e.g., to change the contents

of devices in inventory. The SST37VF512/010/020/040

have to be erased prior to programming. These devices

conform to JEDEC standard pinouts for byte-wide flash

memories.

To meet surface mount and conventional through hole

requirements, the SST37VF512/010/020/040 are offered in

32-pin PLCC, TSOP, and PDIP packages. See Figures 1,

2, and 3 for pinouts.

Device Operation

The SST37VF512/010/020/040 devices are nonvolatile

memory solutions that can be used instead of standard

flash devices if in-system programmability is not required. It

is functionally (Read) and pin compatible with industry

standard flash products.The device supports electrical

Erase operation via an external programmer.

Featuring high performance Byte-Program, the

SST37VF512/010/020/040 provide a typical Byte-Pro-

gram time of 10 µs. Designed, manufactured, and tested

for a wide spectrum of applications, these devices are

offered with an endurance of at least 1000 cycles. Data

retention is rated at greater than 100 years.

Read

The Read operation of the SST37VF512/010/020/040 is

controlled by CE# and OE#. Both CE# and OE# have to be

low for the system to obtain data from the outputs. Once

the address is stable, the address access time is equal to

the delay from CE# to output (T_CE). Data is available at the

output after a delay of TOE from the falling edge of OE#,

assuming the CE# pin has been low and the addresses

have been stable for at least T_CE- T_OE. When the CE# pin

is high, the chip is deselected and a standby current of only

10 µA (typical) is consumed. OE# is the output control and

is used to gate data from the output pins. The data bus is in

high impedance state when either CE# or OE# is V_IH.

Refer to Figure 4 for the timing diagram.

The SST37VF512/010/020/040 are suited for applications

that require infrequent writes and low power nonvolatile

storage. These devices will improve flexibility, efficiency,

and performance while matching the low cost in nonvolatile

applications that currently use UV-EPROMs, OTPs, and

mask ROMs.

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MTP is a trademark of Silicon Storage Technology, Inc.

S71151-02-000 5/01

397

These specifications are subject to change without notice.

12 3 4 5 6 7...16

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SST37VF010-70-3C-NH 替代型号

型号	品牌	替代类型	描述	数据表
M29W010B70K6E	STMICROELECTRONICS	功能相似	1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W010B70K1	STMICROELECTRONICS	功能相似	1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

与SST37VF010-70-3C-NH相关器件

型号	品牌	获取价格	描述	数据表
SST37VF010-70-3C-NHE	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
SST37VF010-70-3C-PH	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
SST37VF010-70-3C-PH	SILICON	获取价格	Flash, 128KX8, 70ns, PDIP32, PLASTIC, MO-015AP, DIP-32
SST37VF010-70-3C-PHE	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
SST37VF010-70-3C-WH	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
SST37VF010-70-3C-WH	SILICON	获取价格	Flash, 128KX8, 70ns, PDSO32, 8 X 14 MM, MO-142BA, TSOP1-32
SST37VF010-70-3C-WHE	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
SST37VF010-70-3C-WHE	SILICON	获取价格	Flash, 128KX8, 70ns, PDSO32, 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32
SST37VF010-70-3I-NH	ETC	获取价格	x8 Flash EEPROM
SST37VF010-70-3I-WH	ETC	获取价格	x8 Flash EEPROM

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