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SST29LE512A-150-4C-NH

更新时间： 2024-09-21 19:39:03
品牌 Logo 应用领域
芯科 - SILICON 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
26页 250K
描述
EEPROM, 64KX8, 150ns, Parallel, CMOS, PQCC32

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SST29LE512A-150-4C-NH 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：QCCJ, LDCC32,.5X.6Reach Compliance Code：unknown
风险等级：5.92最长访问时间：150 ns
命令用户界面：NO数据轮询：YES
耐久性：10000 Write/Erase CyclesJESD-30 代码：R-PQCC-J32
JESD-609代码：e0内存密度：524288 bit
内存集成电路类型：EEPROM内存宽度：8
端子数量：32字数：65536 words
字数代码：64000最高工作温度：70 °C
最低工作温度：组织：64KX8
封装主体材料：PLASTIC/EPOXY封装代码：QCCJ
封装等效代码：LDCC32,.5X.6封装形状：RECTANGULAR
封装形式：CHIP CARRIER页面大小：128 words
并行/串行：PARALLEL电源：3.3 V
认证状态：Not Qualified最大待机电流：0.000015 A
子类别：EEPROMs最大压摆率：0.015 mA
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：J BEND
端子节距：1.27 mm端子位置：QUAD
切换位：YES最长写入周期时间 (tWC)：10 ms
Base Number Matches：1

SST29LE512A-150-4C-NH 数据手册

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512 Kilobit (64K x 8) Page Mode EEPROM  
SST29EE512A / SST29LE512A / SST29VE512A  
Data Sheet  
FEATURES:  
•
Single Voltage Read and Write Operations  
•
Fast Read Access Time  
– 5.0V-only for SST29EE512A  
– 3.0-3.6V for SST29LE512A  
– 2.7-3.6V for SST29VE512A  
– 5.0V-only operation: 70 and 90 ns  
– 3.0-3.6V operation: 150 and 200 ns  
– 2.7-3.6V operation: 200 and 250 ns  
1
•
•
Superior Reliability  
•
•
Latched Address and Data  
2
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Automatic Write Timing  
– Internal VPP Generation  
End of Write Detection  
Low Power Consumption  
•
3
– Active Current: 20 mA (typical) for 5V and  
10 mA (typical) for 3.0/2.7V  
– Standby Current: 10 µA (typical)  
– Toggle Bit  
– Data# Polling  
4
•
•
•
Hardware and Software Data Protection  
•
Fast Page Write Operation  
TTL I/O Compatibility  
– 128 Bytes per Page, 512 Pages  
– Page Write Cycle: 5 ms (typical)  
– Complete Memory Rewrite: 2.5 sec (typical)  
– Effective Byte Write Cycle  
JEDEC Standard  
5
– Flash EEPROM Pinouts and command sets  
Packages Available  
•
Time: 39 µs (typical)  
6
– 32 Pin PDIP  
– 32-Pin PLCC  
– 32-Pin TSOP (8mm x 20mm)  
7
PRODUCT DESCRIPTION  
The SST29EE512A/29LE512A/29VE512A are suited  
for applications that require convenient and economical  
updatingofprogram, configuration, ordatamemory. For  
all system applications, the SST29EE512A/29LE512A/  
29VE512A significantly improve performance and reli-  
ability, while lowering power consumption. The  
SST29EE512A/29LE512A/29VE512A improve flexibil-  
itywhileloweringthecostforprogram,data,andconfigu-  
ration storage applications.  
8
The SST29EE512A/29LE512A/29VE512A are 64K x 8  
CMOS, Page Write EEPROMs manufactured with  
SST’sproprietary,highperformanceCMOSSuperFlash  
technology. The split-gate cell design and thick oxide  
tunneling injector attain better reliability and  
manufacturability compared with alternate approaches.  
The SST29EE512A/29LE512A/29VE512A write with a  
singlepowersupply.InternalErase/Programistranspar-  
ent to the user. The SST29EE512A/29LE512A/  
29VE512AconformtoJEDECstandardpinoutsforbyte-  
wide memories.  
9
10  
11  
12  
13  
14  
15  
16  
To meet high density, surface mount requirements, the  
SST29EE512A/29LE512A/29VE512Aareofferedin32-  
pin TSOP and 32-lead PLCC packages. A 600-mil, 32-  
pin PDIP package is also available. See Figures 1 and 2  
for pinouts.  
Featuring high performance page write, the  
SST29EE512A/29LE512A/29VE512A provide a typical  
byte-write time of 39 µsec. The entire memory, i.e., 64  
KBytes, can be written page-by-page in as little as 2.5  
seconds, when using interface features such as Toggle  
Bit or Data# Polling to indicate the completion of a write  
cycle. To protect against inadvertent write, the  
SST29EE512A/29LE512A/29VE512A have on-chip  
hardware and software data protection schemes. De-  
signed, manufactured, andtestedforawidespectrumof  
applications, the SST29EE512A/29LE512A/29VE512A  
are offered with a guaranteed page write endurance of  
104 cycles. Data retention is rated at greater than 100  
years.  
Device Operation  
TheSSTpagemodeEEPROMoffersin-circuitelectrical  
write capability. The SST29EE512A/29LE512A/  
29VE512A do not require separate Erase and Program  
operations. The internally timed write cycle executes  
both erase and program transparently to the user.  
The SST29EE512A/29LE512A/29VE512A have indus-  
try standard Software Data Protection. The  
SST29EE512A/29LE512A/29VE512A are compatible  
with industry standard EEPROM pinouts and  
functionality.  
3©0129-0919 2S/i9li9con Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice.  
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