是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | HVSON, SOLCC8,.25 | Reach Compliance Code: | compliant |
风险等级: | 5.62 | 最大时钟频率 (fCLK): | 80 MHz |
数据保留时间-最小值: | 100 | 耐久性: | 100000 Write/Erase Cycles |
JESD-30 代码: | R-PDSO-N8 | 长度: | 6 mm |
内存密度: | 8388608 bit | 内存集成电路类型: | FLASH |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 8 | 字数: | 1048576 words |
字数代码: | 1000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
组织: | 1MX8 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | HVSON |
封装等效代码: | SOLCC8,.25 | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE | 并行/串行: | SERIAL |
编程电压: | 2.5 V | 座面最大高度: | 0.8 mm |
串行总线类型: | SPI | 最大待机电流: | 0.00002 A |
最大压摆率: | 0.025 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 2.3 V | 标称供电电压 (Vsup): | 2.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | AUTOMOTIVE | 端子形式: | NO LEAD |
端子节距: | 1.27 mm | 端子位置: | DUAL |
类型: | NOR TYPE | 宽度: | 5 mm |
写保护: | HARDWARE/SOFTWARE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SST26VF080AT-80E/MF70SVAO | MICROCHIP |
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2.5V/3.0V 8-Mbit Serial Quad I/O⢠(SQIâ¢) | |
SST26VF080AT-80E/SN | MICROCHIP |
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2.5V/3.0V 8-Mbit Serial Quad I/O⢠(SQIâ¢) | |
SST26VF080AT-80E/SN70SVAO | MICROCHIP |
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2.5V/3.0V 8-Mbit Serial Quad I/O⢠(SQIâ¢) | |
SST26WF016B | MICROCHIP |
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1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory | |
SST26WF016B-104I/MF | MICROCHIP |
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1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory | |
SST26WF016B-104I/SN | MICROCHIP |
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1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory | |
SST26WF016BA | MICROCHIP |
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1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory | |
SST26WF016BA-104I/MF | MICROCHIP |
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1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory | |
SST26WF016BA-104I/SN | MICROCHIP |
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1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory | |
SST26WF016BAT-104I/MF | MICROCHIP |
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1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory |