SST26VF040A
2.5V/3.0V 4-Mbit Serial Quad I/O™ (SQI™) Flash Memory
• Security ID:
Features
- One-Time-Programmable (OTP) 2-Kbyte
• Single Voltage Read and Write Operations:
Secure ID:
- 2.7V-3.6V or 2.3V-3.6V
- 128-bit unique, factory preprogrammed
identifier
• Serial Interface Architecture:
- Nibble-wide multiplexed I/O’s with SPI-like
- User-programmable area
serial command structure:
• Temperature Range:
- Mode 0 and Mode 3
- Industrial: -40°C to +85°C
- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol
- Extended: -40°C to +125°C
• High-Speed Clock Frequency:
• Automotive AEC-Q100 Qualified
- 2.7V-3.6V: 104 MHz maximum (Industrial)
• Packages Available:
- 2.3V-3.6V: 80 MHz maximum (Industrial and
- 8-contact WDFN (6 mm x 5 mm)
Extended)
- 8-lead SOIC (3.90 mm)
• Burst Modes:
• All Devices are RoHS Compliant
- Continuous linear burst
- 8/16/32/64-byte linear burst with wrap-around
Product Description
• Superior Reliability:
The Serial Quad I/O™ (SQI™) family of Flash memory
- Endurance: 100,000 cycles (minimum)
devices features a six-wire, 4-bit I/O interface that
- Greater than 100 years data retention
allows for low-power, high-performance operation in a
• Low-Power Consumption:
low pin count package. SST26VF040A also supports
- Active Read current: 15 mA (typical @
104 MHz)
full command-set compatibility to traditional Serial
Peripheral Interface (SPI) protocol. System designs
using SQI Flash devices occupy less board space and
ultimately lower system costs.
- Standby Current: 15 µA (typical)
• Fast Erase Time:
- Sector/Block Erase: 20 ms (typical), 25 ms
(maximum)
All members of the 26 Series, SQI family are manufac-
tured with proprietary, high-performance CMOS Super-
Flash® technology. The split-gate cell design and
thick-oxide tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
- Chip Erase: 40 ms (typical), 50 ms
(maximum)
• Page-Program:
SST26VF040A significantly improves performance and
reliability, while lowering power consumption. These
devices write (Program or Erase) with a single-power
supply of 2.3V-3.6V. The total energy consumed is a
function of the applied voltage, current and time of
application. Since for any given voltage range, the
SuperFlash technology uses less current to program
and has a shorter erase time, the total energy
consumed during any erase or program operation is
less than alternative Flash memory technologies.
- 256 bytes per page in x1 or x4 mode
• End-of-Write Detection:
- Software polling the BUSY bit in STATUS
register
• Flexible Erase Capability:
- Uniform 4-Kbyte sectors
- Uniform 32-Kbyte overlay blocks
- Uniform 64-Kbyte overlay blocks
• Write-Suspend:
See Figure 2-1 for pin assignments.
- Suspend program or erase operation to
access another block/sector
• Software Reset (RST) mode
• Software Write Protection:
- Write protection through Block Protection bits
in STATUS register
2020-2021 Microchip Technology Inc.
DS20006292B-page 1