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SST25VF080B PDF预览

SST25VF080B

更新时间： 2024-09-18 09:04:35
品牌 Logo 应用领域
美国微芯 - MICROCHIP 闪存
页数 文件大小 规格书
36页 3768K
描述
8 Mbit SPI Serial Flash

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SST25VF080B 数据手册

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8 Mbit SPI Serial Flash  
SST25VF080B  
A Microchip Technology Company  
Data Sheet  
SST's 25 series Serial Flash family features a four-wire, SPI-compatible inter-  
face that allows for a low pin-count package which occupies less board space  
and ultimately lowers total system costs. The SST25VF080B devices are  
enhanced with improved operating frequency which lowers power consump-  
tion. SST25VF080B SPI serial flash memories are manufactured with SST's  
proprietary, high-performance CMOS SuperFlash technology. The split-gate  
cell design and thick-oxide tunneling injector attain better reliability and manu-  
facturability compared with alternate approaches  
Features:  
• Single Voltage Read and Write Operations  
• Auto Address Increment (AAI) Programming  
– 2.7-3.6V  
– Decrease total chip programming time over Byte-Pro-  
gram operations  
• Serial Interface Architecture  
• End-of-Write Detection  
– SPI Compatible: Mode 0 and Mode 3  
– Software polling the BUSY bit in Status Register  
– Busy Status readout on SO pin in AAI Mode  
• High Speed Clock Frequency  
– 50/66 MHz conditional (see Table 15)  
- (SST25VF080B-50-xx-xxxx)  
– 80 MHz  
• Hold Pin (HOLD#)  
– Suspends a serial sequence to the memory  
without deselecting the device  
- (SST25VF080B-80-xx-xxxx)  
• Superior Reliability  
• Write Protection (WP#)  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
– Enables/Disables the Lock-Down function of the status  
register  
• Low Power Consumption:  
• Software Write Protection  
– Active Read Current: 10 mA (typical)  
– Standby Current: 5 µA (typical)  
– Write protection through Block-Protection bits in status  
register  
• Flexible Erase Capability  
• Temperature Range  
– Uniform 4 KByte sectors  
– Commercial: 0°C to +70°C  
– Uniform 32 KByte overlay blocks  
– Uniform 64 KByte overlay blocks  
– Industrial: -40°C to +85°C  
• Packages Available  
• Fast Erase and Byte-Program:  
– 8-lead SOIC (200 mils)  
– 8-lead SOIC (150 mils)  
– 8-contact WSON (6mm x 5mm)  
– 8-lead PDIP (300 mils)  
– Chip-Erase Time: 35 ms (typical)  
– Sector-/Block-Erase Time: 18 ms (typical)  
– Byte-Program Time: 7 µs (typical)  
• All devices are RoHS compliant  
www.microchip.com  
www.sst.com  
©2011 Silicon Storage Technology, Inc.  
S71296-05-000  
02/11  
1234567...36

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