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SST25VF064C-80-4I-S3AE

更新时间： 2024-09-18 06:14:23
品牌 Logo 应用领域
SST 闪存内存集成电路光电二极管时钟
页数 文件大小 规格书
31页 903K
描述
64 Mbit SPI Serial Dual I/O Flash

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SST25VF064C-80-4I-S3AE 数据手册

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64 Mbit SPI Serial Dual I/O Flash  
SST25VF064C  
SST25VF032B32Mb Serial Peripheral Interface (SPI) flash memory  
Data Sheet  
FEATURES:  
•
•
•
Single Voltage Read and Write Operations  
– 2.7-3.6V  
Serial Interface Architecture  
– SPI Compatible: Mode 0 and Mode 3  
Dual Input/Output Support  
– Fast-Read Dual-Output Instruction  
– Fast-Read Dual I/O Instruction  
High Speed Clock Frequency  
– 80 MHz for High-Speed Read (0BH)  
– 75 MHz for Fast-Read Dual-Output (3BH)  
– 50 MHz for Fast-Read Dual I/O (BBH)  
– 33 MHz for Read Instruction (03H)  
•
•
Fast Erase  
– Chip-Erase Time: 35 ms (typical)  
– Sector-/Block-Erase Time: 18 ms (typical)  
Page-Program  
– 256 Bytes per page  
– Single and Dual Input support  
– Fast Page-Program time in 1.5 ms (typical)  
End-of-Write Detection  
– Software polling the BUSY bit in Status Register  
Write Protection (WP#)  
– Enables/Disables the Lock-Down function of the  
status register  
•
•
•
•
•
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
•
•
Software Write Protection  
– Write protection through Block-Protection bits in sta-  
tus register  
Low Power Consumption  
Security ID  
– Active Read Current: 12 mA (typical @ 80 MHz) for  
single-bit read)  
– Active Read Current: 14 mA (typical @ 75MHz) for  
dual-bit read)  
– One-Time Programmable (OTP) 256 bit, Secure ID  
- 64 bit Unique, Factory Pre-Programmed identifier  
- 192 bit User-Programmable  
Temperature Range  
– Commercial = 0°C to +70°C  
– Industrial: -40°C to +85°C  
•
•
– Standby Current: 5 µA (typical)  
•
Flexible Erase Capability  
– Uniform 4 KByte sectors  
– Uniform 32 KByte overlay blocks  
– Uniform 64 KByte overlay blocks  
Packages Available  
– 16-lead SOIC (300 mils)  
– 8-contact WSON (6mm x 8mm)  
– 8-lead SOIC (200 mils)  
•
All devices are RoHS compliant  
PRODUCT DESCRIPTION  
The SST 25 series Serial Flash family features a four-wire,  
SPI-compatible interface that allows for a low pin-count  
package which occupies less board space and ultimately  
lowers total system costs. SST25VF064C SPI serial flash  
memory is manufactured with SST proprietary, high-perfor-  
mance CMOS SuperFlash technology. The split-gate cell  
design and thick-oxide tunneling injector attain better reli-  
ability and manufacturability compared with alternate  
approaches.  
ply of 2.7-3.6V. The total energy consumed is a function of  
the applied voltage, current, and time of application. Since  
for any given voltage range, the SuperFlash technology  
uses less current to program and has a shorter erase time,  
the total energy consumed during any Erase or Program  
operation is less than alternative flash memory technolo-  
gies.  
The SST25VF064C device is offered in 16-lead SOIC (300  
mils), 8-contact WSON (6mm x 8mm), and 8-lead SOIC  
(200 mils) packages. See Figure 2 for pin assignments.  
The SST25VF064C significantly improves performance  
and reliability, while lowering power consumption. The  
device writes (Program or Erase) with a single power sup-  
©2010 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71392-04-000  
1
04/10  
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