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SST25VF064C-80-4C-Q2AE

更新时间： 2024-09-18 20:29:39
品牌 Logo 应用领域
芯科 - SILICON 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
31页 903K
描述
EEPROM, 64MX1, Serial, CMOS, PDSO8, 6 X 8 MM, ROHS COMPLIANT, WSON-8

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SST25VF064C-80-4C-Q2AE 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：SON包装说明：WSON-8
针数：8Reach Compliance Code：unknown
ECCN代码：3A991.B.1.B.1HTS代码：8542.32.00.51
风险等级：5.66Is Samacsys：N
最大时钟频率 (fCLK)：80 MHz耐久性：100000 Write/Erase Cycles
JESD-30 代码：R-PDSO-N8长度：8 mm
内存密度：64094208 bit内存集成电路类型：FLASH
内存宽度：1功能数量：1
端子数量：8字数：64094208 words
字数代码：64000000工作模式：SYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：64MX1封装主体材料：PLASTIC/EPOXY
封装代码：VSON封装等效代码：SOLCC8,.3
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, VERY THIN PROFILE
并行/串行：SERIAL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：3/3.3 V编程电压：2.7 V
认证状态：Not Qualified座面最大高度：0.8 mm
串行总线类型：SPI最大待机电流：0.00002 A
子类别：Flash Memories最大压摆率：0.025 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子形式：NO LEAD端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
类型：NOR TYPE宽度：6 mm
写保护：HARDWARE/SOFTWAREBase Number Matches：1

SST25VF064C-80-4C-Q2AE 数据手册

 浏览型号SST25VF064C-80-4C-Q2AE的Datasheet PDF文件第2页浏览型号SST25VF064C-80-4C-Q2AE的Datasheet PDF文件第3页浏览型号SST25VF064C-80-4C-Q2AE的Datasheet PDF文件第4页浏览型号SST25VF064C-80-4C-Q2AE的Datasheet PDF文件第5页浏览型号SST25VF064C-80-4C-Q2AE的Datasheet PDF文件第6页浏览型号SST25VF064C-80-4C-Q2AE的Datasheet PDF文件第7页 
64 Mbit SPI Serial Dual I/O Flash  
SST25VF064C  
SST25VF032B32Mb Serial Peripheral Interface (SPI) flash memory  
Data Sheet  
FEATURES:  
•
•
•
Single Voltage Read and Write Operations  
– 2.7-3.6V  
Serial Interface Architecture  
– SPI Compatible: Mode 0 and Mode 3  
Dual Input/Output Support  
– Fast-Read Dual-Output Instruction  
– Fast-Read Dual I/O Instruction  
High Speed Clock Frequency  
– 80 MHz for High-Speed Read (0BH)  
– 75 MHz for Fast-Read Dual-Output (3BH)  
– 50 MHz for Fast-Read Dual I/O (BBH)  
– 33 MHz for Read Instruction (03H)  
•
•
Fast Erase  
– Chip-Erase Time: 35 ms (typical)  
– Sector-/Block-Erase Time: 18 ms (typical)  
Page-Program  
– 256 Bytes per page  
– Single and Dual Input support  
– Fast Page-Program time in 1.5 ms (typical)  
End-of-Write Detection  
– Software polling the BUSY bit in Status Register  
Write Protection (WP#)  
– Enables/Disables the Lock-Down function of the  
status register  
•
•
•
•
•
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
•
•
Software Write Protection  
– Write protection through Block-Protection bits in sta-  
tus register  
Low Power Consumption  
Security ID  
– Active Read Current: 12 mA (typical @ 80 MHz) for  
single-bit read)  
– Active Read Current: 14 mA (typical @ 75MHz) for  
dual-bit read)  
– One-Time Programmable (OTP) 256 bit, Secure ID  
- 64 bit Unique, Factory Pre-Programmed identifier  
- 192 bit User-Programmable  
Temperature Range  
– Commercial = 0°C to +70°C  
– Industrial: -40°C to +85°C  
•
•
– Standby Current: 5 µA (typical)  
•
Flexible Erase Capability  
– Uniform 4 KByte sectors  
– Uniform 32 KByte overlay blocks  
– Uniform 64 KByte overlay blocks  
Packages Available  
– 16-lead SOIC (300 mils)  
– 8-contact WSON (6mm x 8mm)  
– 8-lead SOIC (200 mils)  
•
All devices are RoHS compliant  
PRODUCT DESCRIPTION  
The SST 25 series Serial Flash family features a four-wire,  
SPI-compatible interface that allows for a low pin-count  
package which occupies less board space and ultimately  
lowers total system costs. SST25VF064C SPI serial flash  
memory is manufactured with SST proprietary, high-perfor-  
mance CMOS SuperFlash technology. The split-gate cell  
design and thick-oxide tunneling injector attain better reli-  
ability and manufacturability compared with alternate  
approaches.  
ply of 2.7-3.6V. The total energy consumed is a function of  
the applied voltage, current, and time of application. Since  
for any given voltage range, the SuperFlash technology  
uses less current to program and has a shorter erase time,  
the total energy consumed during any Erase or Program  
operation is less than alternative flash memory technolo-  
gies.  
The SST25VF064C device is offered in 16-lead SOIC (300  
mils), 8-contact WSON (6mm x 8mm), and 8-lead SOIC  
(200 mils) packages. See Figure 2 for pin assignments.  
The SST25VF064C significantly improves performance  
and reliability, while lowering power consumption. The  
device writes (Program or Erase) with a single power sup-  
©2009 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71392-03-000  
1
12/09  
1234567...31

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SST25VF064C-80-4I-Q2AE SST

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SST25VF064C-80-4I-Q2CE SST

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SST25VF064C-80-4I-S3AE SILICON

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 		EEPROM, 64MX1, Serial, CMOS, PDSO8, 0.200 INCH, ROHS COMPLIANT, SOIC-8
SST25VF064C-80-4I-S3AE SST

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 		64 Mbit SPI Serial Dual I/O Flash
SST25VF064C-80-4I-S3CE SST

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