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SST25VF040B-50-4I-QAF

更新时间： 2024-11-26 20:28:27
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
32页 727K
描述
4M X 1 FLASH 2.7V PROM, PDSO8, 6 X 5 MM, ROHS COMPLIANT, WSON-8

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中文翻译

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SST25VF040B-50-4I-QAF 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Not Recommended零件包装代码：SON
包装说明：HVSON, SOLCC8,.25针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.32.00.51Factory Lead Time：8 weeks
风险等级：8.23Is Samacsys：N
最大时钟频率 (fCLK)：50 MHz数据保留时间-最小值：100
耐久性：100000 Write/Erase CyclesJESD-30 代码：R-PDSO-N8
JESD-609代码：e4长度：6 mm
内存密度：4194304 bit内存集成电路类型：FLASH
内存宽度：1功能数量：1
端子数量：8字数：4194304 words
字数代码：4000000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：4MX1封装主体材料：PLASTIC/EPOXY
封装代码：HVSON封装等效代码：SOLCC8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
并行/串行：SERIAL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：3/3.3 V编程电压：2.7 V
认证状态：Not Qualified座面最大高度：0.8 mm
串行总线类型：SPI最大待机电流：0.00002 A
子类别：Flash Memories最大压摆率：0.03 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：NO LEAD
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED类型：NOR TYPE
宽度：5 mm写保护：HARDWARE/SOFTWARE
Base Number Matches：1

SST25VF040B-50-4I-QAF 数据手册

 浏览型号SST25VF040B-50-4I-QAF的Datasheet PDF文件第2页浏览型号SST25VF040B-50-4I-QAF的Datasheet PDF文件第3页浏览型号SST25VF040B-50-4I-QAF的Datasheet PDF文件第4页浏览型号SST25VF040B-50-4I-QAF的Datasheet PDF文件第5页浏览型号SST25VF040B-50-4I-QAF的Datasheet PDF文件第6页浏览型号SST25VF040B-50-4I-QAF的Datasheet PDF文件第7页 
SST25VF040B  
4 Mbit SPI Serial Flash  
Features  
Product Description  
• Single Voltage Read and Write Operations  
- 2.7-3.6V  
The 25 series Serial Flash family features a four-wire,  
SPI-compatible interface that allows for a low pin-count  
package which occupies less board space and ulti-  
mately lowers total system costs. The SST25VF040B  
devices are enhanced with improved operating fre-  
quency and even lower power consumption.  
SST25VF040B SPI serial flash memories are manu-  
factured with proprietary, high-performance CMOS  
SuperFlash technology. The split-gate cell design and  
thick-oxide tunneling injector attain better reliability and  
manufacturability compared with alternate approaches.  
• Serial Interface Architecture  
- SPI Compatible: Mode 0 and Mode 3  
• High Speed Clock Frequency  
- Up to 50 MHz  
• Superior Reliability  
- Endurance: 100,000 Cycles (typical)  
- Greater than 100 years Data Retention  
• Low Power Consumption:  
SST25VF040B devices significantly improve perfor-  
mance and reliability, while lowering power consump-  
tion. The devices write (Program or Erase) with a single  
power supply of 2.7-3.6V for SST25VF040B. The total  
energy consumed is a function of the applied voltage,  
current, and time of application. Since for any given  
voltage range, the SuperFlash technology uses less  
current to program and has a shorter erase time, the  
total energy consumed during any Erase or Program  
operation is less than alternative flash memory technol-  
ogies.  
- Active Read Current: 10 mA (typical)  
- Standby Current: 5 µA (typical)  
• Flexible Erase Capability  
- Uniform 4 KByte sectors  
- Uniform 32 KByte overlay blocks  
- Uniform 64 KByte overlay blocks  
• Fast Erase and Byte-Program:  
- Chip-Erase Time: 35 ms (typical)  
- Sector-/Block-Erase Time: 18 ms (typical)  
- Byte-Program Time: 7 µs (typical)  
The SST25VF040B device is offered in an 8-lead SOIC  
(200 mils), 8-lead SOIC (150 mils), and 8-contact  
WSON (6mm x 5mm) packages. See Figure 2-1 for pin  
assignments.  
• Auto Address Increment (AAI) Programming  
- Decrease total chip programming time over  
Byte-Program operations  
• End-of-Write Detection  
- Software polling the BUSY bit in Status Register  
- Busy Status readout on SO pin in AAI Mode  
• Hold Pin (HOLD#)  
- Suspends a serial sequence to the memory  
without deselecting the device  
• Write Protection (WP#)  
- Enables/Disables the Lock-Down function of the  
status register  
• Software Write Protection  
- Write protection through Block-Protection bits in  
status register  
• Temperature Range  
- Commercial: 0°C to +70°C  
- Industrial: -40°C to +85°C  
• Packages Available  
- 8-lead SOIC (200 mils)  
- 8-lead SOIC (150 mils)  
- 8-contact WSON (6mm x 5mm)  
• All devices are RoHS compliant  
2005-2017 Microchip Technology Inc.  
DS20005051D-page 1  
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SST25VF040B-50-4I-QAF 替代型号

型号 品牌 替代类型 描述 数据表
SST25VF040B-80-4I-QAE MICROCHIP

类似代替

 4M X 1 FLASH 2.7V PROM, PDSO8, 6 X 5 MM, ROHS COMPLIANT, WSON-8
SST25VF040B-50-4I-QAF-T MICROCHIP

类似代替

 FLASH 2.7V PROM
SST25VF040B-50-4I-SAF MICROCHIP

功能相似

 4M X 1 FLASH 2.7V PROM, PDSO8, 5 X 6 MM, ROHS COMPLIANT, MS-012AA, SOIC-8

与SST25VF040B-50-4I-QAF相关器件

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SST25VF040B-50-4I-S2AE SST

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SST25VF040B-50-4I-S2AE-T MICROCHIP

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 		4M X 1 FLASH 2.7V PROM, PDSO8, 5.20 X 8 MM, ROHS COMPLIANT, SOIC-8
SST25VF040B-50-4I-S2AF SST

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 		4 Mbit SPI Serial Flash
SST25VF040B-50-4I-S2AF-T MICROCHIP

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 		FLASH 2.7V PROM
SST25VF040B-50-4I-SAE SST

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SST25VF040B-50-4I-SAE MICROCHIP

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SST25VF040B-50-4I-SAE-T MICROCHIP

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