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SST25VF040-20-4I-SAE PDF预览

SST25VF040-20-4I-SAE

更新时间： 2024-11-07 09:04:35
品牌 Logo 应用领域
SST 闪存
页数 文件大小 规格书
24页 658K
描述
2 Mbit / 4 Mbit SPI Serial Flash

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SST25VF040-20-4I-SAE 数据手册

 浏览型号SST25VF040-20-4I-SAE的Datasheet PDF文件第2页浏览型号SST25VF040-20-4I-SAE的Datasheet PDF文件第3页浏览型号SST25VF040-20-4I-SAE的Datasheet PDF文件第4页浏览型号SST25VF040-20-4I-SAE的Datasheet PDF文件第5页浏览型号SST25VF040-20-4I-SAE的Datasheet PDF文件第6页浏览型号SST25VF040-20-4I-SAE的Datasheet PDF文件第7页 
2 Mbit / 4 Mbit SPI Serial Flash  
SST25VF020 / SST25VF040  
SST25VF020 / 0402Mb / 4Mb Serial Peripheral Interface (SPI) flash memory  
Data Sheet  
FEATURES:  
•
•
Single 2.7-3.6V Read and Write Operations  
•
•
End-of-Write Detection  
– Software Status  
Hold Pin (HOLD#)  
– Suspends a serial sequence to the memory  
without deselecting the device  
Write Protection (WP#)  
– Enables/Disables the Lock-Down function of the  
status register  
Software Write Protection  
– Write protection through Block-Protection bits in  
status register  
Serial Interface Architecture  
– SPI Compatible: Mode 0 and Mode 3  
20 MHz Max Clock Frequency  
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Low Power Consumption:  
– Active Read Current: 7 mA (typical)  
– Standby Current: 8 µA (typical)  
Flexible Erase Capability  
– Uniform 4 KByte sectors  
– Uniform 32 KByte overlay blocks  
Fast Erase and Byte-Program:  
– Chip-Erase Time: 70 ms (typical)  
– Sector- or Block-Erase Time: 18 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
Auto Address Increment (AAI) Programming  
– Decrease total chip programming time over  
Byte-Program operations  
•
•
•
•
•
•
•
•
Temperature Range  
– Commercial: 0°C to +70°C  
– Industrial: -40°C to +85°C  
– Extended: -20°C to +85°C  
•
Packages Available  
– 8-lead SOIC 150 mil body width  
for SST25VF020  
– 8-lead SOIC 200 mil body width  
for SST25VF040  
– 8-contact WSON (5mm x 6mm)  
•
PRODUCT DESCRIPTION  
SST’s serial flash family features a four-wire, SPI-com-  
patible interface that allows for a low pin-count package  
occupying less board space and ultimately lowering total  
system costs. SST25VF020/040 SPI serial flash memo-  
ries are manufactured with SST’s proprietary, high perfor-  
mance CMOS SuperFlash Technology. The split-gate  
cell design and thick-oxide tunneling injector attain better  
reliability and manufacturability compared with alternate  
approaches.  
rent, and time of application. Since for any given voltage  
range, the SuperFlash technology uses less current to  
program and has a shorter erase time, the total energy  
consumed during any Erase or Program operation is less  
than alternative flash memory technologies. The  
SST25VF020/040 devices operate with a single 2.7-3.6V  
power supply.  
The SST25VF020 devices are offered in an 8-lead SOIC  
150 mil body width (SA) package. The SST25VF040  
devices are offered in an 8-lead SOIC 200 mil body width  
(S2A) package. All densities are offered in the 8-contact  
WSON package. See Figure 1 for the pin assignments.  
The SST25VF020/040 devices significantly improve per-  
formance, while lowering power consumption. The total  
energy consumed is a function of the applied voltage, cur-  
©2004 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71231-04-000  
1
6/04  
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