是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.15 |
Is Samacsys: | N | 其他特性: | LOW INSERTION LOSS |
配置: | SINGLE | 最大漏源导通电阻: | 100 Ω |
FET 技术: | JUNCTION | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 135 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.36 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SST113_SOT-23 | MICROSS |
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N-CHANNEL JFET | |
SST1130 | ETC |
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TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | SOT-23 | |
SST1130T216 | ROHM |
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Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOL | |
SST1139 | ETC |
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TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 30MA I(C) | SOT-23 | |
SST1139T116 | ROHM |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili | |
SST1139T216 | ROHM |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili | |
SST113-E3 | VISHAY |
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Transistor | |
SST113-SOT-23-3L | Linear |
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Transistor, | |
SST113-SOT-23-3L-ROHS | Linear |
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Transistor, | |
SST113T | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236, |