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SST111T-1T2 PDF预览

SST111T-1T2

更新时间: 2024-11-16 15:52:55
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
2页 52K
描述
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET

SST111T-1T2 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownHTS代码:8541.21.00.95
风险等级:5.15配置:SINGLE
最大漏源导通电阻:30 ΩFET 技术:JUNCTION
最大反馈电容 (Crss):5 pFJESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SST111T-1T2 数据手册

 浏览型号SST111T-1T2的Datasheet PDF文件第2页 

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