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SSR24C30CTJ PDF预览

SSR24C30CTJ

更新时间: 2024-11-04 08:31:23
品牌 Logo 应用领域
SSDI 局域网高压光电二极管
页数 文件大小 规格书
3页 125K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 12A, 300V V(RRM), Silicon Carbide, TO-257,

SSR24C30CTJ 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.34其他特性:PD-CASE
应用:HIGH VOLTAGE外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON CARBIDE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.75 V
JEDEC-95代码:TO-257JESD-30 代码:R-XSFM-P3
最大非重复峰值正向电流:50 A元件数量:2
相数:1端子数量:3
最高工作温度:250 °C最低工作温度:-55 °C
最大输出电流:12 A封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
最大功率耗散:120 W最大重复峰值反向电压:300 V
最大反向电流:200 µA表面贴装:NO
技术:SCHOTTKY端子形式:PIN/PEG
端子位置:SINGLEBase Number Matches:1

SSR24C30CTJ 数据手册

 浏览型号SSR24C30CTJ的Datasheet PDF文件第2页浏览型号SSR24C30CTJ的Datasheet PDF文件第3页 
SSR24C60CTJ &  
SSR24C60CAJ Series  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
24 Amp  
Schottky Silicon Carbide  
Centertap Rectifier  
600 Volts  
DESIGNER’S DATA SHEET  
Part Number / Ordering Information 1/  
SSR24C __ CT J __  
│ │ │ └ Screening2/  
__ = Not Screened  
│ │ │  
│ │ │  
│ │ │  
│ │ │  
TV = TX Level  
TXV = TXV Level  
S = S Level  
Features:  
World's Smallest Hermetic SiC Centertap Rectifier  
High Voltage, 600V  
│ │ Package J = TO-257  
│ │  
Very High Operating Temperature, 250°C  
No Recovery Time (tfr or trr)  
High Current Operation, 24A  
│ └ Configuration CT = Common Cathode  
CA = Common Anode  
Hermetically Sealed, Isolated Packaging  
TX, TXV, and S Level screening available  
Voltage 30 = 300 V 40 = 400 V  
50 = 500 V 60 = 600 V  
Maximum Ratings3/  
Symbol  
Value  
Units  
Volts  
Amps  
SSR24C30  
SSR24C40  
SSR24C50  
SSR24C60  
300  
400  
500  
600  
Peak Repetitive and Peak Surge Reverse  
Voltage  
VRRM  
VRSM  
Per Leg  
Total  
12  
24  
Average Rectified Forward Current  
(Resistive Load, 60 Hz, Sine Wave)  
IO  
Non Repetitive Peak Surge Current  
IFSM  
PD  
50  
120  
Amps  
Watts  
°C  
(8.3 ms Pulse, Non-repetitive Half Sine Wave, per leg)  
Power Dissipation  
(TC = 25°C)  
Operating & Storage Temperature 4/  
Top & Tstg  
-55 to +250  
Maximum Thermal Resistance  
Junction to Case  
RθJC  
3
°C/W  
1
NOTES:  
TO-257 (J)  
1/ For ordering information, price, operating curves, and availability – contact  
factory.  
2/ Screening based on MIL-PRF-19500. Screening flows available on request.  
3/ All Electrical Characteristics @ 25°C Unless Otherwise Specified.  
4/ If high temp operation is desired (>175°C) consult factory for soldering  
consideration.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RS0028E  
DOC  

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