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SSR2008ZUBTXV PDF预览

SSR2008ZUBTXV

更新时间: 2024-11-08 19:05:11
品牌 Logo 应用领域
SSDI 局域网二极管
页数 文件大小 规格书
2页 92K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 80V V(RRM), Silicon, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN

SSR2008ZUBTXV 技术参数

生命周期:Active零件包装代码:TO-254
包装说明:HERMETIC SEALED, TO-254Z, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.1
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-254
JESD-30 代码:S-XSFM-P3最大非重复峰值正向电流:300 A
元件数量:2相数:1
端子数量:3最大输出电流:20 A
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:80 V表面贴装:NO
技术:SCHOTTKY端子形式:PIN/PEG
端子位置:SINGLEBase Number Matches:1

SSR2008ZUBTXV 数据手册

 浏览型号SSR2008ZUBTXV的Datasheet PDF文件第2页 
SSR2008M, SSR2008Z  
SSR2009M, SSR2009Z  
SSR2010M, SSR2010Z  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
20 AMPS  
100 VOLTS  
SCHOTTKY  
RECTIFER  
Designer’s Data Sheet  
Part Number/Ordering Information 1/  
SSR20 __ __ __ __  
Screening 2/  
__ = Not Screened  
TX = TX Level  
TXV = TXV Level  
S = S Level  
FEATURES:  
PIV: 100 Volts  
Low Reverse Leakage Current  
Low Forward Voltage Drop  
Guard Ring for Overvoltage Protection  
Isolated Hermetically Sealed Package  
Available in Glass or Ceramic Seal Packages  
Custom Lead Forming Available  
Eutectic Die Attach  
Lead Options  
__ = Straight Leads,  
DB = Bent Down  
UB = Bent Up  
Package  
M = TO-254  
Z = TO-254Z  
Voltage / Family  
08 = 80V  
175°C Operating Junction Temperature  
TX, TXV, and Space Level Screening  
Available  
09 = 90V  
10 = 100V  
MAXIMUM RATINGS3/  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage and  
DC Blocking Voltage  
SSR2008M & Z  
SSR2009M & Z  
SSR2010M & Z  
VRRM  
VRWM  
VR  
80  
90  
100  
Volts  
Average Rectified Forward Current 1/4/  
IO  
Amps  
20  
(Resistive Load, 60 Hz, Sine Wave, TC = 25°C)  
4/  
Peak Surge Current  
IFSM  
TOP & Tstg  
RθJC  
Amps  
°C  
300  
-65 to +175  
1.2  
(8.3 ms Pulse, Half Sine Wave, TA = 25°C)  
Operating and Storage Temperature  
Maximum Thermal Resistance4/  
(Junction to Case)  
°C/W  
NOTE:  
TO-254  
TO-254Z  
1/ Derate linearly at 1A/°C for TC > 155°C  
2/ Screening based on MIL-PRF-19500. Screening flows available on request.  
3/ All electrical characteristics @25°C, unless otherwise specified  
4/ Pins 2 and 3 externally connected together  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RS0091J  
DOC  

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