SSR1N50BTM

更新时间： 2024-09-21 13:14:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管脉冲
页数	文件大小	规格书
7页	265K
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数据手册

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SSR1N50BTM 数据手册

SSR/U1N50A

Advanced Power MOSFET

FEATURES

BV_DSS= 500 V

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

R_DS(on)= 5.5

I_D= 1.3 A

Improved Gate Charge

Extended Safe Operating Area

D-PAK

I-PAK

Lower Leakage Current : 10 A (Max.) @ V_DS= 500V

Lower R_DS(ON): 4.046 (Typ.)

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

500

1.3

Units

V_DSS

Continuous Drain Current (T_C=25 C)

I_D

Continuous Drain Current (T_C=100 C )

0.82

I_DM

V_GS

E_AS

I_AR

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

113

1.3

2.6

3.5

2.5

E_AR

dv/dt

Repetitive Avalanche Energy

V/ns

Peak Diode Recovery dv/dt

Total Power Dissipation (T_A=25

Total Power Dissipation (T_C=25

Linear Derating Factor

)

P_D

0.21

W/ C

Operating Junction and

T_J, T_STG

- 55 to +150

300

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

T_L

Thermal Resistance

Symbol

Characteristic

Typ.

Max.

Units

R_q

Junction-to-Case

4.76

R_q

Junction-to-Ambient

C/W

R_q

110

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

12 3 4 5 6 7

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