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SSR1N50ATF

更新时间: 2024-11-09 07:13:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 640K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

SSR1N50ATF 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.92
配置:Single最大漏极电流 (Abs) (ID):1.3 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e0
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):26 W
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

SSR1N50ATF 数据手册

 浏览型号SSR1N50ATF的Datasheet PDF文件第2页浏览型号SSR1N50ATF的Datasheet PDF文件第3页浏览型号SSR1N50ATF的Datasheet PDF文件第4页浏览型号SSR1N50ATF的Datasheet PDF文件第5页浏览型号SSR1N50ATF的Datasheet PDF文件第6页浏览型号SSR1N50ATF的Datasheet PDF文件第7页 
SSR/U1N50A  
Advanced Power MOSFET  
FEATURES  
BVDSS = 500 V  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
W
RDS(on) = 5.5  
ID = 1.3 A  
Improved Gate Charge  
Extended Safe Operating Area  
D-PAK  
I-PAK  
m
Lower Leakage Current : 10 A (Max.) @ VDS = 500V  
W
Lower RDS(ON) : 4.046 (Typ.)  
2
1
1
2
3
3
1. Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Drain-to-Source Voltage  
Value  
500  
1.3  
Units  
VDSS  
V
O
Continuous Drain Current (TC=25 C)  
ID  
A
O
Continuous Drain Current (TC=100 C )  
0.82  
5
1
IDM  
VGS  
EAS  
IAR  
Drain Current-Pulsed  
A
V
O
+
_
Gate-to-Source Voltage  
Single Pulsed Avalanche Energy  
Avalanche Current  
30  
2
113  
1.3  
2.6  
3.5  
2.5  
26  
mJ  
A
O
1
O
EAR  
dv/dt  
1
Repetitive Avalanche Energy  
mJ  
V/ns  
W
O
3
Peak Diode Recovery dv/dt  
O
O
*
Total Power Dissipation (TA=25  
Total Power Dissipation (TC=25  
Linear Derating Factor  
)
)
C
C
O
PD  
W
O
0.21  
W/ C  
Operating Junction and  
TJ , TSTG  
- 55 to +150  
300  
Storage Temperature Range  
O
C
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from case for 5-seconds  
TL  
Thermal Resistance  
Symbol  
Characteristic  
Typ.  
Max.  
Units  
Rq  
Junction-to-Case  
--  
--  
--  
4.76  
50  
JC  
O
Rq  
*
Junction-to-Ambient  
Junction-to-Ambient  
C/W  
JA  
Rq  
110  
JA  
*
When mounted on the minimum pad size recommended (PCB Mount).  
Rev. B  
©1999 Fairchild Semiconductor Corporation  

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