是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.92 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 1.3 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e0 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 26 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSR1N50ATM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
SSR1N50B | FAIRCHILD |
获取价格 |
520V N-Channel MOSFET | |
SSR1N50BTF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 1.3A I(D), 520V, 5.3ohm, 1-Element, N-Channel, Silicon, Met | |
SSR1N50BTM | FAIRCHILD |
获取价格 |
暂无描述 | |
SSR1N55 | SAMSUNG |
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Power Field-Effect Transistor, 1A I(D), 550V, 12ohm, 1-Element, N-Channel, Silicon, Metal- | |
SSR1N60 | SAMSUNG |
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Power Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal- | |
SSR1N60A | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 900MA I(D) | TO-252AA | |
SSR1N60ATM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
SSR1N60B | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET | |
SSR1N60BTF | ROCHESTER |
获取价格 |
0.9A, 600V, 12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 |