SSR1008MUBTXV

更新时间： 2024-01-01 22:41:12

品牌	Logo	应用领域
SSDI		整流二极管
页数	文件大小	规格书
2页	126K
描述
Rectifier Diode,

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技术参数
数据手册

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SSR1008MUBTXV 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.76
Base Number Matches：	1

SSR1008MUBTXV 数据手册

SSR1008

SSR1009

SSR1010

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

10 AMP

100 VOLTS

SCHOTTKY RECTIFIER

Designer’s Data Sheet

FEATURES:

• Extremely Low Forward Voltage Drop

• Low Reverse Leakage

• Hermetically Sealed Power Surface Mount

Package

• Guard Ring for Overvoltage Protection

• Eutectic Die Attach

• 175^°C Operating Junction Temperature

• TX, TXV, or Space Level Screening Available

SMD1

MAXIMUM RATINGS

RATING

SYMBOL

VALUE

UNIT

Peak Repetitive Reverse Voltage and DC

Blocking Voltage

V_RRM

V_RWM

V_R

SSR1008

SSR1009

SSR1010

100

Volts

Average Rectified Output Current ^1/

(Resistive Load, 60Hz, Sine Wave, TA=25^°C)

Peak Surge Current ^1/

(8.3 ms Pulse, Half Sine Wave, superimposed on

I_O, allow junction to reach equilibrium between

pulses, TA=25^°C)

I_O

Amps

I_FSM

200

Operating and Storage Temperature

T_OP& T_STG

-65 to +175

1.6

^°C

Maximum Thermal Resistance ^1/

Junction to Case

R_θJC

^°C/W

Notes: 1/ For optimal performance, leads 1 & 3 should be connected.

NOTE: All specifications are subject to change without notification.

DATA SHEET #: RS0197D

DOC

SCD's for these devices should be reviewed by SSDI prior to release.

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