Datasheet > SSPL5508

SSPL5508

更新时间： 2022-02-26 14:45:48

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
7页	1058K
描述
55V N-Channel MOSFET

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SSPL5508 数据手册

SSPL5508

55V N-Channel MOSFET

Main Product Characteristics

V_DSS55V

R_DS(on) 7.2mohm(typ.)

I_D110A

MarkingandPin

Assignment

SchematicDiagram

TO-220

Features and Benefits



AdvancedProcessTechnology

Special designed for PWM, load switching and

generalpurposeapplications



Ultralowon-resistancewithlowgatecharge

Fastswitching andreversebodyrecovery

175℃operating temperature

Description

These N-Channel enhancement mode power field effect transistors are produced using our

proprietary MOSFET technology. This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching performance, and withstand high energy

pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

switch mode power supplies.

Absolute Max Rating

Symbol

Parameter

Max.

110

Units

I_D@ TC = 25°C

I_D@ TC = 100°C

I_DM

Continuous Drain Current, V_GS@ 10V①

Pulsed Drain Current②

440

200

W/°C

Power Dissipation③

P_D@TC = 25°C

Linear Derating Factor

1.3

V_DS

Drain-Source Voltage

V_GS

Gate-to-Source Voltage

± 20

576

E_AS

Single Pulse Avalanche Energy @ L=0.3mH

Avalanche Current @ L=0.3mH

Operating Junction and Storage Temperature Range

I_AS

T_JT_STG

-55 to +175

°C

www.goodark.com

Page 1 of 7

Rev.1.1

12 3 4 5 6 7

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