SSM6J51TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ)
SSM6J51TU
High Current Switching Applications
Unit: mm
•
•
Suitable for high-density mounting due to compact package
Low on-resistance:
R
on
= 54 mΩ (max) (@V
= -2.5 V)
= -1.8 V)
= -1.5 V)
GS
85 mΩ (max) (@V
GS
150mΩ(max) (@V
GS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
V
-12
±8
V
V
DS
1,2,5,6 : Drain
Gate-Source voltage
V
GSS
3
4
: Gate
: Source
DC
I
-4
D
Drain current
A
Pulse
I
-8
DP
Drain power dissipation
Channel temperature
PD (Note 1)
500
150
−55~150
mW
°C
T
ch
JEDEC
-
-
Storage temperature range
T
stg
°C
JEITA
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
2-2T1D
TOSHIBA
Weight: 7 mg (typ.)
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
Marking
Equivalent Circuit (top view)
6
5
KPC
2
4
6
1
5
4
3
1
3
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01