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SSM6G18NU(TE85L) PDF预览

SSM6G18NU(TE85L)

更新时间: 2024-09-25 21:19:43
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
8页 228K
描述
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2A I(D),LLCC

SSM6G18NU(TE85L) 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.61
配置:Single最大漏极电流 (Abs) (ID):2 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

SSM6G18NU(TE85L) 数据手册

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SSM6G18NU  
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode  
SSM6G18NU  
Power Management Switch Applications  
Combined a P-channel MOSFET and a schottky barrier diode in one  
package.  
Unit: mm  
Low R  
and Low V  
F
DS (ON)  
±
2.0 0.1  
B
A
R
R
R
R
= 261 mΩ (max) (@V  
= 185 mΩ (max) (@V  
= 143 mΩ (max) (@V  
= -1.5V)  
= -1.8 V)  
= -2.5 V)  
= -4.5 V)  
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
GS  
GS  
GS  
GS  
= 112 mΩ (max) (@V  
Absolute Maximum Ratings  
MOSFET Ta = 25°C  
0
0.05  
(
)
0.13  
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
20  
±8  
Unit  
V
*BOTTOM VIEW  
0.65  
0.65  
0.95  
2
V
V
DSS  
1
3
Gate-Source voltage  
V
GSS  
DC  
I
(Note 1)  
(Note 1)  
2.0  
4.0  
1
D
Drain current  
A
Pulse  
I
DP  
P (Note 2)  
D
Power dissipation  
W
6
5
4
0.3  
±
0.075  
t 10s  
2
M
0.05  
A
B
0.65 0.075  
±
M
±
0.65 0.075  
0.05  
A
B
Channel temperature  
T
ch  
150  
°C  
1. Anode  
2. NC  
4. Source  
5. Gate  
Schottky Barrier Diode(Ta = 25°C)  
3. Drain  
6. Cathode  
Characteristics  
Reverse voltage  
Symbol  
Rating  
30  
Unit  
V
UDFN6  
V
R
JEDEC  
Average forward current  
I
1.0  
A
O
JEITA  
Peak one cycle surge forward  
current(10ms)  
I
5.0  
A
FSM  
TOSHIBA  
2-2Y1A  
Junction temperature  
T
j
150  
°C  
Weight: 8.5 mg (typ.)  
MOSFET and Diode (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Storage temperature range  
T
stg  
55 to 150  
°C  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: The junction temperature should not exceed 150°C during use.  
Note 2: Mounted on FR4 board.  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645mm2)  
1
2010-09-30  

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