Datasheet > SSM3J353F

SSM3J353F

更新时间： 2024-11-19 14:57:59

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SSM3J353F 数据手册

SSM3J353F

MOSFETs Silicon P-Channel MOS (U-MOS)

SSM3J353F

1. Applications

•

Power Management Switches

2. Features

(1) 4.0 V gate drive voltage.

(2) Low drain-source on-resistance

: RDS(ON) = 274 mΩ (max) (@VGS = -4.0 V, ID = -0.5 A)

RDS(ON) = 232 mΩ (max) (@VGS = -4.5 V, ID = -0.5 A)

RDS(ON) = 150 mΩ (max) (@VGS = -10 V, ID = -2.0 A)

3. Packaging and Pin Assignment

1: Gate

2: Source

3: Drain

S-Mini

Start of commercial production

2016-02

2016-12-19

Rev.2.0

12 3 4 5 6 7...9

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