Datasheet > SSM3J332R

SSM3J332R

更新时间： 2024-09-14 17:15:35

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	458K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-5.6A;Vgs(th)(V):±20;漏源导通电阻:55mΩ@-10V

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SSM3J332R 数据手册

SSM3J332R

UMW

P−CHANNEL MOSFET

SOT–23

FEATURES

VDS (V) = -30V

RDS(ON)

46m (VGS = -10V)

54m

(VGS = -4.5V)

1. GATE

2. SOURCE

3. DRAIN

APPLICATIONS

For Mobile Computing

Load Switch

Notebook Adaptor Switch

DC/DC Converter

ABSOLUTEMA XIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

V_DS

Limit

- 30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

_C= 25 °C

_C= 70 °C

_A= 25 °C

- 5.6

- 5.1

Continuous Drain Current (T_J= 150 °C)

I_D

- 5.4^b,c

- 4.3^b,c

- 18

T_A= 70 °C

Pulsed Drain Current (t = 100 µs)

I_DM

I_S

T_C= 25 °C

- 2.1

- 1^b,c

Continous Source-Drain Diode Current

T_A= 25 °C

T_C= 25 °C

2.5

_C= 70 °C

_A= 25 °C

1.6

Maximum Power Dissipation

P_D

1.25^b,c

0.8^b,c

- 55 to 150

T_A= 70 °C

T_J, T_stg

°C

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^b,d

Symbol

Typical

Maximum

100

Unit

R_thJA

R_thJF

t  5 s

Steady State

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 166 °C/W.

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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