SSH7N60

更新时间： 2024-10-14 22:21:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管局域网
页数	文件大小	规格书
8页	652K
描述
600V N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SSH7N60 数据手册

November 2001

SSH7N60B

600V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies.

•

7.3A, 600V, R

= 1.2Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 38 nC)

Low Crss ( typical 23 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

TO-3P

SSH Series

G D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

SSH7N60B

600

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

7.3

- Continuous (T = 100°C)

4.6

(Note 1)

Drain Current

- Pulsed

29.2

Gate-Source Voltage

± 30

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

420

7.3

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

dv/dt

5.5

Power Dissipation (T = 25°C)

160

- Derate above 25°C

Operating and Storage Temperature Range

1.28

W/°C

°C

T , T

-55 to +150

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8! from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Typ

Max

0.78

Units

°C/W

θJC

θCS

θJA

0.24

Rev. B, November 2001

12 3 4 5 6 7 8

中文翻译

下载PDF

与SSH7N60相关器件

型号	品牌	获取价格	描述	数据表
SSH7N60A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 7.3A I(D) \| TO-247VAR
SSH7N60B	FAIRCHILD	获取价格	600V N-Channel MOSFET
SSH7N80A	FAIRCHILD	获取价格	Advanced Power MOSFET
SSH7N90	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 900V V(BR)DSS \| 7A I(D) \| TO-247VAR
SSH7N90A	FAIRCHILD	获取价格	N-CHANNEL POWER MOSFET
SSH80N06A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 85A I(D) \| TO-247VAR
SSH8N55	SAMSUNG	获取价格	Power Field-Effect Transistor, 8A I(D), 550V, 1ohm, 1-Element, N-Channel, Silicon, Metal-o
SSH8N60	SAMSUNG	获取价格	Power Field-Effect Transistor, 8A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-o
SSH8N70	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 700V V(BR)DSS \| 8A I(D) \| TO-247VAR
SSH8N80	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 8A I(D) \| TO-247VAR