型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSH6N55 | SAMSUNG |
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Power Field-Effect Transistor, 6A I(D), 550V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal | |
SSH6N55A | SAMSUNG |
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Power Field-Effect Transistor, 6A I(D), 550V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal | |
SSH6N60 | SAMSUNG |
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Power Field-Effect Transistor, 6A I(D), 600V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal | |
SSH6N60A | SAMSUNG |
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Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal | |
SSH6N70A | FAIRCHILD |
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Advenced Power MOSFET | |
SSH6N80AS | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 6A I(D) | TO-247VAR | |
SSH6N90A | FAIRCHILD |
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Advanced Power MOSFET | |
SSH70N08 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 70A I(D) | TO-247VAR | |
SSH70N10 | FAIRCHILD |
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Advanced Power MOSFET | |
SSH70N10 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me |