Datasheet > SSE04N65SL_15

SSE04N65SL_15

更新时间： 2024-09-14 01:22:27

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SECOS		/
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描述
N-Ch Enhancement Mode Power MOSFET

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SSE04N65SL_15 数据手册

SSE04N65SL

4A , 650V , R_DS(ON)2.7

Ω

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

TO-220P

DESCRIPTION

The SSE04N65SL is the highest performance trench

N-ch MOSFETs with extreme high cell density , which provide

excellent R_DS(on)and gate charge for most of the synchronous

buck converter applications .

FEATURES

ꢀ

Advanced high cell density Trench technology

Super Low Gate Charge

Excellent CdV/dt effect decline

100% EAS Guaranteed

Green Device Available

Drain

Millimeter

Min. Max.

2.54 BCS.

REF.

Min.

9.3

14.2

Max.

10.6

16.5

Gate

1.8

2.9

3.95

0.6

2.7 BSC.

2.6

0.3

5.8

1.2

12.6

1.0

14.7

1.8

7.0

0.4

1.0

1.45

3.6

4.8

Source

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Rating

650

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±30

T_C=25°C

Continuous Drain Current

Pulsed Drain Current

I_D

T_C=100°C

2.8

I_DM

P_D

T_C=25°C

Derate above 25°C

100

Total Power Dissipation

0.8

Single Pulse Avalanche Energy ¹

E_AS

202

°C

Operating Junction and Storage Temperature Range

T_J, T_STG

-55~150

Thermal Resistance Rating

Maximum Thermal Resistance Junction-Ambient

Maximum Thermal Resistance Junction-Case

Notes:

R_θJA

R_θJC

62.5

1.25

°C / W

1. L=30mH,I_AS=3.36A, V_DD=150V, R_G=25Ω, Starting T_J=25°C

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

08-Oct-2013 Rev. A

Page 1 of 5

12 3 4 5

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