是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-39 | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.73 | 最大集电极电流 (IC): | 0.2 A |
集电极-发射极最大电压: | 800 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 30 | JEDEC-95代码: | TO-39 |
JESD-30 代码: | O-MBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 200 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 7 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N501339TX | SSDI | Small Signal Bipolar Transistor, 0.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, |
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2N50135S | SSDI | Small Signal Bipolar Transistor, 0.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, |
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2N50135TX | SSDI | Small Signal Bipolar Transistor, 0.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, |
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2N5013S | MICROSEMI | NPN SILICON TRANSISTOR |
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2N5014 | NJSEMI | HIGH VOLTAGE NPN TRANSISTOR |
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2N5014 | MICROSEMI | NPN SILICON TRANSISTOR |
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