10A4

更新时间： 2024-01-30 07:12:43

品牌	Logo	应用领域
SSC		整流二极管
页数	文件大小	规格书
2页	265K
描述
10A Axial Silicon Rectifier

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技术参数
数据手册

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10A4 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.71
其他特性：	STANDARD: MIL-R-26	安装特点：	THROUGH HOLE MOUNT
最低工作温度：	-55 °C	封装形状：	TUBULAR PACKAGE
额定温度：	25 °C	电阻器类型：	FIXED RESISTOR
子类别：	Fixed Resistors	表面贴装：	NO
技术：	WIRE WOUND	端子形状：	WIRE
Base Number Matches：	1

10A4 数据手册

10A01 - 10A10

10A Axial Silicon Rectifier

PRODUCT SUMMARY

Voltage range 50 to 1000 Volts

Axial package

P600

Rated 10.0 Amps at T_A=50°C

FEATURES

Low forward voltage drop

Low reverse leakage current

High current capability

High surge-current capability

MECHANICAL DATA

Case: molded plastic

Epoxy: UL 94V-O rated flame retardant

Lead: axial leads, matte-Sn plated, solderable

per MIL-STD-202, Method 208 guaranteed

Polarity: color band denotes cathode end

High temperature soldering guaranteed:

260^oC for 10 seconds with 0.375” (9.5mm)

lead lengths

Dimensions in inches and (millimeters)

Weight: 2.1 grams

Pb-free, RoHS compliant.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Symbol

10A

Parameter

Units

10A1 10A2 10A4 10A6 10A8

Maximum recurrent peak reverse voltage

50 100 200 400 600 800 1000

35 70 140 280 420 560 700

50 100 200 400 600 800 1000

V_RRM

V_RMS

V_DC

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

with 0.375" (9.5mm) lead lengths

at TA = 50°C

I_(AV)

10.0

Peak forward surge current, 8.3 ms single

half sine-wave superimposed on rated load

(JEDEC method )

I_FSM

600

1.0

Maximum instantaneous forward voltage

at 10.0A

V_F

I_R

Maximum DC reverse current

at rated DC blocking voltage

at T_J=25°C

at T_J=100°C

100

150

°C/W

°C

Typical junction capacitance

(Note 1)

Rθ _JA

T_J

Typical thermal resistance (Note 2)

Operating temperature range

Storage temperature range

-65 to +125

-65 to +150

T_STG

°C

Notes: 1. Measured at 1 MHz with applied reverse voltage of 4.0 V D.C.

2. Thermal resistance from junction to ambient

9/1/2006 Rev.4.01

www.SiliconStandard.com

1 of 2

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