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SSB44-E3/5BT PDF预览

SSB44-E3/5BT

更新时间: 2024-11-05 22:58:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 127K
描述
DIODE SCHOTTKY 40V 4A DO214AA

SSB44-E3/5BT 数据手册

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SSB43L, SSB44  
Vishay General Semiconductor  
www.vishay.com  
High Current Density Surface-Mount Schottky Rectifier  
FEATURES  
Available  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Very low forward voltage drop  
• High surge capability  
Available  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak 260 °C  
SMB (DO-214AA)  
• AEC-Q101 qualified available  
Cathode  
Anode  
- Automotive ordering code: base P/NHE3 or P/NHM3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
LINKS TO ADDITIONAL RESOURCES  
3
D
3
D
TYPICAL APPLICATIONS  
3D Models  
For use in low voltage high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
4.0 A  
30 V, 40 V  
100 A  
MECHANICAL DATA  
Case: SMB (DO-214AA)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
VF  
TJ max.  
0.38 V, 0.42 V  
150 °C  
Package  
SMB (DO-214AA)  
Single  
Circuit configuration  
(“_X” denotes revision code e.g. A, B, .....)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
Polarity: color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SSB43L  
43L  
30  
SSB44  
S44  
40  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
V
V
V
A
21  
28  
Maximum DC blocking voltage  
Max. average forward rectified current at TL (fig. 1)  
30  
40  
IF(AV)  
4.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
100  
A
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dV/dt  
TJ  
10 000  
V/μs  
°C  
-65 to +150  
-65 to +150  
TSTG  
°C  
Revision: 23-Apr-2020  
Document Number: 88884  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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