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SS9018J

更新时间: 2024-01-26 12:30:21
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
1页 173K
描述
Transistor

SS9018J 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

SS9018J 数据手册

  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-92 Plastic-Encapsulate Transistors  
TO-92  
SS9018 TRANSISTOR (NPN)  
1.EMITTER  
2.BASE  
FEATURES  
High Current Gain Bandwidth Product  
3.COLLECTOR  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
Parameter  
Value Units  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
25  
18  
4
V
V
V
VCEO  
VEBO  
IC  
Collector Current -Continuous  
Collector Power Dissipation  
Thermal Resistance from Junction to Ambient  
Junction Temperature  
50  
mA  
PC  
RθJA  
Tj  
0.4  
W
312.5 /W  
150  
Tstg  
Storage Temperature  
-55-150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
IC= 100μA, IE=0  
IC= 0.1mA, IB=0  
IE= 100μA, IC=0  
VCB= 20V, IE=0  
VCE=15V,IB=0  
Min  
25  
18  
4
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
0.1  
0.1  
μA  
μA  
μA  
Collector cut-off current  
ICEO  
Emitter cut-off current  
IEBO  
VEB=3V, IC=0  
0.1  
DC current gain  
hFE  
VCE=5V, IC= 1mA  
IC=10mA, IB=1mA  
IC=10mA,IB=1mA  
28  
270  
0.5  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE(sat)  
VBE(sat)  
V
V
1.42  
V
CE=5 V, IC=5mA  
Transition frequency  
1.2  
GHz  
fT  
f =400MHz  
CLASSIFICATION OF hFE  
Rank  
D
E
F
G
H
I
J
Ra nge  
28-45  
39-60  
54-80  
72-108  
97-146  
132-198  
180-270  
A,May,2011  

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