Datasheet > SS8550 SOT-23

SS8550 SOT-23

更新时间： 2024-11-19 17:01:07

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	479K
描述
25V,1.5A,General Purpose PNP Bipolar Transistor

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SS8550 SOT-23 数据手册

PNP Silicon Epitaxial Planar Transistor

SS8550

Features



High DC current gain

Complimentary to SS8050

Mechanical Data



Case: SOT-23

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-23

Ordering Information

Part Number

Package

SOT-23

Shipping Quantity

Marking Code

SS8550

3000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Collector Current (Peak)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

-40

Unit

-25

-6

-1.5

I_CM

-2

Base Current (Continuous)

Power Dissipation

I_B

-0.15

0.3

P_D

°C

Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case ^*1

Thermal Resistance Junction-to-Lead ^*1

R_θJA

R_θJC

R_θJL

350

150

125

°C /W

Note 1: The data tested by surface mounted on a minimum recommended FR-4 board

STM0150A: September 2023 [2.1]

www.gmesemi.com

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