Datasheet > SS8550

SS8550

更新时间： 2024-11-19 18:06:27

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	478K
描述
SOT-23

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中文翻译

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数据手册

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SS8550 数据手册

SS8550

BIPOLAR TRANSISTOR (PNP)

FEATURES

 Complementary to SS8050

 Excellent h_FELinearity

 High Collector Current

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

-40

Unit

Collector-Base Voltage

Collector-Emitter Voltage

-25

Emitter-Base Voltage

-5

Collector Current

Collector Power Dissipation

-1500

300

°C/W

°C

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

417

150

Storage Temperature

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I =-100uA I =0

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-40

-25

-5

，

V(BR)CEO

V(BR)EBO

I_C=-0.1mA，I_B=0

I =-100uA I =0

，

I_CBO

I_CEO

-0.1

400

V_CB=-40V, I_E=0

Collector cut-off current

V_CE=-20V, I_B=0

V_EB=-5V, I_C=0

Emitter cut-off current

I_EBO

V_CE=-1V, I_C=-100mA

V_CE=-1V, I_C=-800mA

h_FE1

h_FE2

V_CE(sat)

V_BE(sat)

V_BE

120

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

-0.5

-1.2

-1

I_C=-800mA，I_B=-80mA

V_CE=-1V,I_C=-10mA

V_CE=-10V,I_C=-50mA,f=30

Transition frequency

f_T

100

MHz

V_CE=-10V, I_E=0, f=1

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

Range

120-200

200-350

300-400

Marking

1 / 4

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