Datasheet > SS8550

SS8550

更新时间： 2024-11-19 17:01:27

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
5页	1065K
描述
三极管

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SS8550 数据手册

SS8550

GOOD-ARK Electronics

SOT-23 Plastic-Encapsulate Transistors

Features

● Complementary to SS8050.

● 300mW; Power Dissipation of 300mW

● High Stability and High Reliability

RoHS

COMPLIANT

Mechanical Data

Marking:

SOT-23

● SOT-23 Small Outline Plastic Package

● Epoxy UL: 94V-0

Pin definition

● Mounting Position: Any

Maximum Ratings & Electrical Characteristics(TA=25℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

-40

Collector-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

-25

Collector-Emitter Voltage

-5

Emitter -Base Voltage

-1500

300

Collector Current-Continuous

Collector Power Dissipation

Operating junction temperature range

Storage temperature range

Thermal Resistance from Junction to Ambient

P_C

°C

150

-55-+150

417

T_STG

RθJA

°C

℃/W

Electrical Specifications(TA=25℃ unless otherwise noted)

Limits

Parameter

Symbol

Test Conditions

Unit

Min

-40

-25

-5

Max

V(BR)CBO

V(BR)CEO

V(BR)EBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

IC=-100uA, IE=0

IC=-0.1mA, IB=0

IE=-100uA, IC=0

VCE=-20V, IB=0

VCB=-40V, IE=0

CEO

ICBO

EBO

-100

Collector cut-off current

Emitter cut-off current

VEB=-3V, IC=0

-100

400

FE(1)

FE(2)

VCE=-1V, IC=-100mA

VCE=-1V, IC=-800mA

IC=-800mA, IB=-80mA

VCE=-1V, IC=-10mA

120

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

CE(sat)

BE(sat)

VBE

-0.60

-1.20

-1.00

VCE=-10V, IC=-50mA,f=30MHz

VCB=-10V,IE=0,f=1MHz

100

MHz

Cob

Classification OF _hFE(2)

RANK

RANGE

120-200

200-350

300-400

Doc.No.643141

www.goodark.com

12 3 4 5

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