Datasheet > SS8550

SS8550

更新时间： 2024-02-13 14:48:07

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佑风微 - YFW		/
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3页	565K
描述
PNP Transistors

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中文翻译

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技术参数
数据手册

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SS8550 技术参数

极性：	PNP	Collector-emitter breakdown voltage：	25
Collector Current - Continuous：	1.5	DC current gain - Min：	120
DC current gain - Max：	400	Transition frequency：	100
Package：	SOT-323	Storage Temperature Range：	-55-150
class：	Transistors

SS8550 数据手册

SS8550 SOT-23

PNP Transistors

1.Base

Features

2.Emitter

Collector Current: I^C=-1.5A

3.Collector

■

Simplified outline(SOT-23)

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-40

Unit

-25

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-1.5

P^C

0.3

150

Storage Temperature

T^stg

-55 to 150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditions

Min

-40

-25

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V^CBO

V^CEO

V^EBO

I^CBO

I^CEO

I^EBO

I^C=-100 A, I^E=0

I^C=-1mA, I^B=0

I^E=-100 A, I^C=0

V^CB=-40V, I^E=0

V^CE=-20V, I^B=0

V^EB=-5V, I^C=0

-0.1

-1

Collector cut-off current

Emitter cut-off current

-0.1

400

V^CE=-1V, I^C=-100mA

V^CE=-1V, I^C=-800mA

120

DC current gain

h^FE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter on voltage

output capacitance

V^CE(sat)I^C=-800mA, I^B=-80mA

V^BE(sat)I^C=-800mA, I^B=-80mA

V^BE(on)I^C=-1V,V^CE=-10mA

-0.5

-1.2

-1

C^ob

f^T

V^CB=-10V,I^E=0,f=1MHz

MHz

Transition frequency

V^CE= -10V, I^C= -50mA,f=30MHz

100

hFE(1) Classification

Type

Range

Marking

SS8550

200-350

SS8550-L

120-200

SS8550-H

144-202

SS8550-J

300-400

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Dongguan YFW Electronics Co, Ltd.

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