Datasheet > SS8550

SS8550

更新时间： 2024-02-22 16:20:52

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	330K
描述
PNP Silicon General Purpose Transistor

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中文翻译

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技术参数
数据手册

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SS8550 技术参数

极性：	PNP	Collector-emitter breakdown voltage：	25
Collector Current - Continuous：	1.5	DC current gain - Min：	120
DC current gain - Max：	400	Transition frequency：	100
Package：	SOT-323	Storage Temperature Range：	-55-150
class：	Transistors

SS8550 数据手册

SS8550

PNP Silicon

General Purpose Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

Collector

FEATURES

SOT-23

Min

Power dissipation

Collector

Dim

Max

Base

P_CM: 0.3 W

2.800 3.040

1.200 1.400

0.890 1.110

0.370 0.500

1.780 2.040

0.013 0.100

0.085 0.177

0.450 0.600

0.890 1.020

2.100 2.500

0.450 0.600

Base

Collector Current

Emitter

_CM: - 1.5 A

Collector-base voltage

_(BR)CBO: - 40 V

Emitter

Top View

Operating & storage junction temperature

T_J, T_STG: - 55°C ~ + 150°C

All Dimension in mm

ELECTRICAL CHARACTERISTICS at Ta = 25°C

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BV_CBO

-40

Ic = 100μA, I_E= 0

Ic = -0.1mA, I_B= 0

I_E= -100μA, I_C= 0

V_CB= -40 V, I_E= 0

V_CE= -20V, I_B= 0

V_EB= -5V, I_C= 0

BV_CEO

BV_EBO

I_CBO

-25

-5

-0.1

0.5

1.2

350

μA

I_CEO

I_EBO

V_CE(sat)

V_BE(sat)1

*h_FE1

*h_FE2

f_T

I_C= -800 mA, I_B= -80mA

V_CE= -1V, I_C=-100mA

120

100

V_CE= -1V, I_C= -800mA

MHz

V_CE= -10V, I_C= -50mA, f = 30MHz

V_CB= -10V, I_E=0, f=1MHz

C_OB

CLASSIFICATION OF h_FE(1)

Rank

Range

Marking

300-400

120 - 200

200-350

01-June-2005 Rev. B

Page 1 of 2

中文翻译

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