Datasheet > SS8550

SS8550

更新时间： 2024-11-20 09:05:55

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
2页	972K
描述
TRANSISTOR(PNP)

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中文翻译

获取价格

数据手册

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SS8550 数据手册

SS8550

TRANSISTOR(PNP)

SOT–23

FEATURES

 High Collector Current

 Complementary to SS8050

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

1. BASE

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

2. EMITTER

3. COLLECTOR

Collector-Base Voltage

-40

Collector-Emitter Voltage

Emitter-Base Voltage

-25

-5

Collector Current

-1.5

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

300

℃/W

℃

P_C

417

R_ΘJA

T_j

150

Storage Temperature

T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

V_(BR)CBO

I_C=-100µA, I_E=0

-40

Collector-base breakdown voltage

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=-0.1mA, I_B=0

-25

-5

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=-100µA, I_C=0

V_CB=-40V, I_E=0

-100

400

I_CEO

V_CE=-20V, I_B=0

Collector cut-off current

I_EBO

V_EB=-5V, I_C=0

Emitter cut-off current

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

V_BE

V_CE=-1V, I_C=-100mA

V_CE=-1V, I_C=-800mA

I_C=-800mA, I_B=-80mA

V_CE=-1V, I_C=-10mA

V_CE=-10V,I_C=-50mA , f=30MHz

V_CB=-10V, I_E=0, f=1MHz

120

DC current gain

-0.5

-1.2

-1

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

f_T

100

MHz

Transition frequency

C_ob

Collector output capacitance

CLASSIFICATION OF h_FE(1)

RANK

200–350

RANGE

120–200

300–400

MARKING

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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