SS8050C-G

更新时间： 2024-01-24 12:56:42

品牌	Logo	应用领域
WEITRON		晶体小信号双极晶体管放大器
页数	文件大小	规格书
4页	224K
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数据手册

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SS8050C-G 数据手册

SS8050

NPN General Purpose Transistors

TO-92

P b

Lead(Pb)-Free

1. EMITTER

2. BASE

3. COLLECTOR

MAXIMUM RATINGS(T =25˚C unless otherwise noted)

Rating

Symbol

Value

Unit

CBO

CEO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

EBO

Collector Current-Continuous

1.5

Total Device Dissipation T =25°C

°C

1.0

T ,T

Junction and Storage, Temperature

-55 to +150

stg

ELECTRICAL CHARACTERISTICS (T =25˚C unless otherwise noted)

Characteristics

Symbol

Unit

Max

Min

Typ

Collector-Base Breakdown Voltage

I =100µA, I =0

(BR)CBO

Collector-Emitter Breakdown Voltage

I =0.1mA, I =0

(BR)CEO

Emitter Base Breakdown Voltage

I =100µA, I =0

(BR)EBO

Collector cut-oﬀ current

=40V, I =0

µA

0.1

CBO

Emitter cut-oﬀ current

=20V, I =0

µA

CEO

EBO

Emitter cut-oﬀ current

0.1

=5V, I =0

WEITRON

http://www.weitron.com.tw

1/4

19-Jul-05

12 3 4

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