Datasheet > SS8050B(TO-92)

SS8050B(TO-92)

更新时间： 2023-05-15 00:00:00

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SS8050B(TO-92) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

TO-92

SS8050 TRANSISTOR (NPN)

1. EMITTER

2. BASE

FEATURES

Power Dissipation

P_CM: 1 W (T_A=25.)

3. COLLECTOR

: 2 W (T_C=25.)

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Junction Temperature

Storage Temperature

1.5

T_j

150

-55-150

℃

T_stg

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=100uA, I_E=0

V_(BR)CEOI_C=0.1mA, I_B=0

V_(BR)EBOI_E=100μA, I_C=0

I_CBO

I_CEO

V_CB=40V, I_E=0

0.1

400

μA

Emitter cut-off current

V_CE=20V, I_E=0

Emitter cut-off current

I_EBO

V_EB=5V, I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

V_BE

V_CE=1V, I_C=100mA

V_CE=1V, I_C=800mA

I_C=800mA, I_B=80mA

V_CE=1V, I_C=10mA

V_CE=10V, I_C=50mA,f=30MH_Z

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

0.5

1.2

Transition frequency

f_T

100

MHz

CLASSIFICATION OF h_FE(1)

Rank

Range

85-160

120-200

160-300

300-400

A,Apr,2011

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