Datasheet > SS8050

SS8050

更新时间： 2024-10-15 18:10:03

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
3页	133K
描述
Package / Case : SOT-23;Mounting Style : SMD/SMT;Power Rating : 0.3 W;Transistor Polarity : NPN;VCEO : 25 V;VCBO : 40 V;VEBO : 5 V;Max Collector Current : 1.5 A;DC Collector/Base Gain hfe Min : 50;DC Current Gain hFE Max : 400;Certified (AEC-Q101...etc) : AEC-Q101

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SS8050 数据手册

SS8050

Silicon NPN SMD triode

1˖base 2˖emitter 3˖collector

Small and medium-sized power amplifier ,

Ouline example

SOT-23

medium power drive and switching applications

P/N suffix V means AEC-Q101 qualified, e.g:SS8050V

P/N suffix V means Halogen-free

HFE(1) :Classification

Rank

Range

Marking

120-200 200-350 300-400

Maximum ratings(Ta=25ć unless otherwise noted)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Value

Unit

1.5

300

150

Collector Power Dissipation

Junction Temperature

P^C

Storage Temperature

Tstg

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Electrical Characteristics (Ta=25ć unless otherwise noted)

Parameter

Symbol

VCBO

VCEO

VEBO

ICBO

Test Condition

IC=100uA IE=0

IC=1mA IB=0

Min

Max

Unit

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

IE=100uA IC=0

VCB=40V IE=0

VCE=20V IB=0

VCE=5V IC=0

100

400

Collector Cutoff Current

ICEO

Emitter Cutoff Current

IEBO

(1)

HFE

VCE=1V IC=100mA

VCE=1V IC=800mA

120

DC Current Gain

HFE⁽²⁾

Collector-Emitter Saturation Voltage

Collector-Base Saturation Voltage

VCE(sat) IC=800mA IB=80mA

0.5

1.2

VBE(sat) IC=800mA IB=80mA

VCE=10V IC=50mA

transition frequency

100

MHz

f=30MHz

2019-07/17

REV:C

12 3

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