SMD Type
Diodes
Transistors
Schottky Barrier Rectifier
SS52F ~ SS520F
SMAF
Ƶ Features
ƽ Metal silicon junction, majority carrier conduction
ƽ For surface mounted applications
1
2
ƽ Low power loss, high efficiency
ƽ High forward surge current capability
Top View
ƽ For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Simplified outline SMAF and symbol
PIN DESCRIPTION
PIN
1
DESCRIPTION
Cathode
Anode
2
Ƶ Absolute Maximum Ratings and Electrical characteristics
Ratings at 25ć ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
SS
52F
SS
54F
SS
56F
SS
SS
SS
SS
SS
Parameter
Symbol
Unit
V
58F 510F 512F 515F 520F
Maximum Repetitive Peak Reverse Voltage
VRRM
VRMS
VDC
20
14
20
40
28
40
60
42
60
80
56
80
100
70
100
120
84
120
150
105
150
200
140
200
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
IF(AV)
5.0
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
A
IFSM
120
100
VF
IR
0.55
0.7
0.85
Max Instantaneous Forward Voltage at 5 A
V
1.0
50
Ta = 25ć
Maximum DC Reverse Current
at rated DC blocking voltage
mA
Ta = 100ć
Cj
RthJA
Tj
500
300
Typical Junction Capacitance
Typical thermal resistance
Junction Temperature
*1
*2
pF
60
ć/W
150
ć
Storage Temperature
Tstg
-55 to 150
* 1 Measured at 1MHz and applied reverse voltage of 4 V D.C
* 2 P.C.B. mounted with 2ą× 2ą(5×5 cm) copper pad areas.
1
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