Datasheet > SS56C

SS56C

更新时间： 2024-11-10 17:14:59

品牌	Logo	应用领域
友台半导体 - UMW		肖特基二极管
页数	文件大小	规格书
3页	194K
描述
肖特基二极管

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SS56C 数据手册

UMW

SS52 THRU SS510

Features

•

Metal to silicon rectifier, majority

carrier conduction.

For use in low voltage, high

frequency inverters free

wheeling, and polarity

protection applications.

•

Low power loss, high efficiency.

High current capability, low V_F.

High surge capacity.

SMC/DO-214AB

Min

Glass passivated

Dim

Max

6.22

7.11

5.59

6.60

2.75

3.25

0.305

8.13

2.62

0.203

1.27

0.152

7.75

2.00

0.051

0.76

Schottky Rectifiers

All Dimensions in mm

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Value

52 53 54 55 56 58 510

Symbol

Parameter

Units

V_RRM

I_F(AV)

Maximum Repetitive Reverse Voltage

100

Average Rectified Forward Current

.375 " lead length @ T_A= 75°C

Non-repetitive Peak Forward Surge Current

8.3 ms Single Half-Sine-Wave

5.0

I_FSM

150

Storage Temperature Range

-50 to +175

°C

T_stg

T_J

Operating Junction Temperature

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics

Symbol

Parameter

Value

Units

P_D

Power Dissipation

Thermal Resistance, Junction to Ambient

6.0

R_θJA

C/W

Electrical Characteristics

T_A= 25°C unless otherwise noted

Device

Symbol

Parameter

Units

52 53 54 55 56 58 510

V_F

I_R

Forward Voltage @ 5.0 A

Reverse Current @ rated V_RT_A= 25°C

T_A= 100°C

0.55

0.67

0.5

0.85

C_T

Total Capacitance

500

380

V_R= 4.0 V, f = 1.0 MHz

www.umw-ic.com

友台半导体有限公司

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