Datasheet > SS56B

SS56B

更新时间： 2024-09-23 12:57:07

品牌	Logo	应用领域
森美特 - SUNMATE		二极管
页数	文件大小	规格书
2页	538K
描述
5A Patch Schottky diode 60V SMB series

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数据手册

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SS56B 数据手册

SS52B - SS510B

SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE RANGE: 20 - 100V

CURRENT: 5.0 A

Features

! Schottky Barrier Chip

! Ideally Suited for Automatic Assembly

Low Power Loss, High Efficiency

! Surge Overload Rating to 175A Peak

! For Use in Low Voltage Application

! Guard Ring Die Construction

Plastic Case Material has UL Flammability

SMB(DO-214AA)

Classification Rating 94V-O

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Dim

Min

3.30

4.06

1.91

0.15

5.00

0.10

0.76

2.00

Max

3.94

4.70

2.21

0.31

5.59

0.20

1.52

2.62

Mechanical Data

Case: SMB/DO-214AA, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.093 grams (approx.)

All Dimensions in mm

T_A= 25ꢀC unless otherwise specified

Maximum Ratings and Electrical Characteristics

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

SS52B SS53B SS54B SS55B SS56B SS58B SS510B Unit

Symbol

Characteristic

100

Maximum repetitive peak reverse voltage

Maximum RMS voltage

RRM

RMS

100

Maximum DC blocking voltage

Maximum average forward rectified current

at TL(see fig.1)

(AV)

5.0

Peak forward surge current

IFSM

150.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

0.55

0.70

0.85

Maximum instantaneous forward voltage at 5.0A

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

0.5

TA=100 C

200

Typical junction capacitance (NOTE 1)

C/W

Typical thermal resistance (NOTE 2)

Operating junction temperature range

Rθ^JA

50.0

-65 to +125

-65 to +150

TJ,

Storage temperature range

TSTG

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas

1 of 2

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