Datasheet > SS56AF

SS56AF

更新时间： 2024-09-24 14:52:55

品牌	Logo	应用领域
鲁光 - LGE		肖特基二极管
页数	文件大小	规格书
2页	1663K
描述
肖特基二极管

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中文翻译

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技术参数
数据手册

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SS56AF 技术参数

Case Style：	SMAF	IF（A）：	5.0
Maximum recurrent peak reverse voltage：	60	Peak forward surge current：	175
Maximum instantaneous forward voltage：	0.70	@IF(A)：	5.0
Maximum reverse current：	0.5	TJ(℃）：	/
class：	Diodes

SS56AF 数据手册

SS52FA-SS520FA

Surface Mount Schottky Barrier Rectifiers

REVERSE VOLTAGE: 20 --- 100 V

CURRENT: 5.0 A

Features

Plastic package has Underwriters Laborator

ꢀ

111

FlammabilityClassification 94V-0

For surface mounted applications

Low profile package

SMAF

ꢀ

Cathode Band

Top View

Built-in strain relief

0.110(2.80)

0.094(2.40)

0.059(1.50)

0.051(1.30)

Metal silicon junction, majoritycarrier conduction

High surge capability

0.145(3.70)

0.128(3.25)

High current capability,low forward voltage drop

Low power loss,high effciency

0.012(0.30)

0.004(0.10)

0.059(1.50)

0.039(1.00)

ꢀ

For use in low voltage high frequency inverters,free

wheeling and polarityprotection applications

Guardring for overvoltage protection

0.047(1.20)

0.028(0.60)

111

ꢀ

High temperature soldering guaranteed:250^oC/10 1

seconds at terminals

0.190(4.85)

0.172(4.35)

Mechanical Data

ꢀ

Case:JEDEC SMAF,molded plastic over

Dimensions in inches and (millimeters)

1111passivated chip

ꢀ

Polarity: Color band denotes cathode end

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25^oC ambient temperature unless otherwise specified

520FA

UNITS

52FA 53FA 54FA 55FA 56FA 58FA 59FA 510FA 515FA

100

150

200

Maximumrecurrent peak reverse voltage

Maximum RMS voltage

V_RRM

V_RWS

V_DC

105

200

150

MaximumDC blocking voltage

100

Maximumaverage forw ord rectified current at

5.0

I_(AV)

I_FSM

V_F

T_L(SEEFIG.1) (NOTE2)

Peak forw ard surge current 8.3ms single half-

c sine-w ave superimposed on rated load(JEDEC

c Method)

175

Maximuminstantaneous forw ard voltage at

v 5.0A(NOTE.1)

0.85

0.45

0.55

0.70

0.5

MaximumDC reverse current @T_A=25^oC

I_R

at rated DC blockjing voltage(NOTE1) @T_A=100^oC

R_θ

^oC/W

Typical thermal resitance (NOTE2)

R_θ

^oC

Operating junction temperature range

Storage temperature range

T_J

-55--- +150

T_STG

NOTE: 1.Pulse test:300 S pulse width,1%duty cycle

2. P.C.B.mounted with 0.55"X0.55"(14.0X14.0mm²)copper pad areas

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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