Datasheet > SS5512F-PJ

SS5512F-PJ

更新时间： 2022-06-24 15:43:52

品牌	Logo	应用领域
平晶微 - PJSEMI		/
页数	文件大小	规格书
3页	558K
描述
Schottky Barrier Rectifier

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数据手册

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SS5512F-PJ 数据手册

SS52F-PJ thru SS520F-PJ

Schottky Barrier Rectifier

FEATURES

PINNING

 For surface mount applications

DESCRIPTION

Cathode

 High forward surge current capability

 Low power loss,high efficiency

Anode

 Metal silicon junction,majority carriers conduction

MECHANICAL DATA

 Case: SMAF molded plastic body

Top View

Marking Code: SS52 — SS520

Simplified outline SMAF and symbol

 Terminals: Solderable per MIL-STD-750， Method 2026

 Weight: Approximated 0.027 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derating by 20 %.

SS56F

-PJ

SS58F SS510F SS512F SS515F SS520F

SS52F

-PJ

SS54F

-PJ

PARAMETER

SYMBOL

UNIT

-PJ

Maximum Repetitive Peak Reverse

Voltage

V_RRM

100

120

150

200

V_RMS

V_DC

105

150

140

200

Maximum RMS Voltage

100

120

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current

I_F(AV)

5.0

I_FSM

V_F

150

Peak Forward Surge Current (Note1)

Maximum Forward Voltage at 5.0 A

0.55

0.70

0.85

Maximum DC Reverse Current

at Rated DC Blocking Voltage at

1.0

I_R

T_A=25℃

T_A=100℃

C_J

500

300

Typical Junction Capacitance (Note2)

Typical Thermal Resistance(Note3)

℃/W

R_θJA

Operating Junction Temperature

Range

T_J

-55 to +125

℃

OStorage Temperature Range

-55 to +150

T_STG

Notes: 1. Measured at 8.3 ms single half sine wave superimposed on rated load (JEDEC Method).

2. Measured at 1MHz and applied reverse voltage of 4 V D.C.

3. P.C.B. mounted with 2.0" X 2.0" (5cm X 5 cm) copper pad areas.

www.pingjingsemi.com

Revision:1.0 Oct-2017

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