SMD Schottky Barrier Rectifiers
SS54C-HF Thru. SS520C-HF
Reverse Voltage: 40 to 200 Volts
Forward Current: 5.0 Amp
RoHS Device
Halogen Free
SMC (DO-214AB)
0.276(7.00)
0.256(6.50)
Features
0.128(3.25)
0.108(2.75)
0.244(6.20)
0.220(5.60)
- Metal silicon junction, majority carrier conduction.
- For surface mounted applications.
- Low power loss, high efficiency.
- High forward surge current capability.
0.315(8.00)
0.299(7.60)
0.012(0.31)
0.006(0.15)
- For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications.
0.094(2.39)
0.079(2.00)
0.063(1.60)
0.035(0.90)
0.008(0.21)
0.002(0.05)
Mechanical data
- Case: SMC
Dimensions in inches and (millimeter)
- Terminals: Solderable per MIL-STD-750,
method 2026.
Circuit Diagram
Cathode
Anode
Maximum Ratings and Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20%
Symbols
VRRM
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
SS54C-HF
SS56C-HF
SS510C-HF SS515C-HF SS520C-HF Units
40
28
40
60
42
60
100
70
150
105
150
200
140
200
V
V
V
A
VRMS
Maximum DC blocking voltage
VDC
100
5
Maximum average forward rectified current
IF(AV)
Peak forward surge current, 8.3ms
single half sine-wave superimposed
on rated load (JEDEC method)
IFSM
175
150
A
Max instantaneous forward voltage at 5A
VF
IR
0.55
600
0.70
0.85
V
Maximum DC reverse current
at rated DC reverse voltage
Tj = 25°C
Tj =100°C
1.0
50
mA
pF
Typical junction capacitance (Note 1)
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
Cj
400
RθJA
Tj
35
°C/W
°C
-55 ~ +150
-55 ~ +150
Tstg
°C
Notes: 1. Measured at 1 MHz and applied reverse voltage of 4 V D.C
2. P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
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SP-JB027
Comchip Technology CO., LTD.