Datasheet > SS5150B

SS5150B

更新时间： 2024-09-17 12:57:15

品牌	Logo	应用领域
森美特 - SUNMATE		二极管光电二极管
页数	文件大小	规格书
2页	310K
描述
5A Patch Schottky diode 150V SMB series

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中文翻译

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SS5150B 数据手册

SS5150B - SS5200B

SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE RANGE: 150 - 200V

CURRENT: 5.0 A

Features

Schottky Barrier Chip

Ideally Suited for Automatic Assembly

Low Power Loss, High Efficiency

For Use in Low Voltage Application

Guard Ring Die Construction

Plastic Case Material has UL Flammability

Classification Rating 94V-O

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SMB(DO-214AA)

Dim

Min

3.30

4.06

1.91

0.15

5.00

0.10

0.76

2.00

Max

3.94

4.70

2.21

0.31

5.59

0.20

1.52

2.62

Mechanical Data

Case: SMB/DO-214AA, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.093 grams (approx.)

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Symbol

SS5150B

SS5200B

Characteristic

Unit

RRM

150

105

150

Volts

Maximum repetitive peak reverse voltage

Maximum RMS voltage

200

150

200

VRMS

VDC

Maximum DC blocking voltage

Maximum average forward rectified current

at TL(see fig.1)

I(AV)

5.0

Amps

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

IFSM

150.0

Amps

0.85

Maximum instantaneous forward voltage at 5.0A

0.95

Volts

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

0.2

TA=100 C

2.0

200

Typical junction capacitance (NOTE 1)

C/W

Typical thermal resistance (NOTE 2)

Operating junction temperature range

Storage temperature range

50.0

RθJA

-50 to +150

TJ,

TSTG

Note:

1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.P.C.B. mounted with 0.2x0.2

”(5.0x5.0mm) copper pad areas

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