Datasheet > SS5150

SS5150

更新时间： 2024-09-17 12:57:15

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森美特 - SUNMATE		/
页数	文件大小	规格书
2页	311K
描述
5A Patch Schottky diode 150V SMC series

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中文翻译

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SS5150 数据手册

SS5150 - SS5200

SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE RANGE: 150 - 200V

CURRENT: 5.0 A

Features

Schottky Barrier Chip

Ideally Suited for Automatic Assembly

Low Power Loss, High Efficiency

For Use in Low Voltage Application

Guard Ring Die Construction

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Plastic Case Material has UL Flammability

Classification Rating 94V-O

SMC/DO-214AB

Dim

Min

5.59

6.60

2.75

0.15

7.75

0.10

0.76

2.00

Max

6.22

7.11

3.18

0.31

8.13

0.20

1.52

2.62

Mechanical Data

Case: SMC/DO-214AB, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.21 grams (approx.)

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Characteristic

Symbol

SS5150

SS5200

Unit

Volts

Maximum repetitive peak reverse voltage

Maximum RMS voltage

150

105

150

200

150

200

VRRM

VRMS

VDC

Maximum DC blocking voltage

Maximum average forward rectified current

at TL(see fig.1)

I(AV)

5.0

Amps

Peak forward surge current

IFSM

150.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

0.85

Maximum instantaneous forward voltage at 5.0A

0.95

Volts

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

0.2

TA=100 C

2.0

200

Typical junction capacitance (NOTE 1)

C/W

Typical thermal resistance (NOTE 2)

Operating junction temperature range

Storage temperature range

RθJA

50.0

-50 to +150

TJ,

TSTG

-50 to +150

Note:

1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.P.C.B. mounted with 0.2x0.2

”(5.0x5.0mm) copper pad areas

1 of 2

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