SS52F THRU SS520F
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200V
Forward Current - 5.0A
星合 子
XINGHE ELECTRONICS
SMAF
FEATURES
Cathode Band
Top View
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
0.110(2.80)
0.094(2.40)
0.059(1.50)
0.051(1.30)
• Low power loss, high efficiency
• High forward surge current capability
0.150(3.80)
0.128(3.25)
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
0.012(0.30)
0.006(0.15)
0.055(1.40)
0.035(0.90)
0.047(1.20)
0.028(0.70)
MECHANICAL DATA
• Case: SMAF
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight:27mg 0.00086oz
0.199(5.05)
0.179(4.40)
Dimensions in inches and (millimeters)
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25°Cambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Symbols
SS52F
20
SS54F
40
SS56F
60
SS58F
80
SS510F SS512F SS515F
SS520F
200
Units
V
Parameter
Maximum Repetitive Peak Reverse Voltage
VRRM
VRMS
VDC
100
70
120
84
150
105
150
Maximum RMS voltage
14
28
42
56
140
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
20
40
60
80
100
120
200
V
IF(AV)
5.0
A
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
IFSM
VF
IR
150
A
V
Max Instantaneous Forward Voltage at 5 A
0.45
0.55
0.70
0.85
Maximum DC Reverse Current Ta = 25°C
1.0
50
mA
pF
at Rated DC Reverse Voltage
Typical Junction Capacitance 1)
Typical Thermal Resistance
Ta =100°C
800
500
Cj
RθJA
Tj
2)
55
°C/W
°C
Operating Junction Temperature Range
-55 ~ +125
-55 ~ +150
Storage Temperature Range
Tstg
°C
1)
Measured at 1MHz and applied reverse voltage of 4 V D.C.
P.C.B. mounted with 0.2 X 0.2" (5 X 5 mm) copper pad areas.
2)
1
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