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SS510A PDF预览

SS510A

更新时间: 2024-11-15 14:50:15
品牌 Logo 应用领域
鲁光 - LGE 肖特基二极管
页数 文件大小 规格书
2页 1394K
描述
肖特基二极管

SS510A 技术参数

Case Style:SMAIF(A):5.0
Maximum recurrent peak reverse voltage:100Peak forward surge current:175
Maximum instantaneous forward voltage:0.85@IF(A):5.0
Maximum reverse current:0.5TJ(℃):/
class:Diodes

SS510A 数据手册

 浏览型号SS510A的Datasheet PDF文件第2页 
SS52A-SS520A  
Surface Mount Schottky Barrier Rectifiers  
REVERSE VOLTAGE: 20 --- 100 V  
CURRENT: 5.0 A  
Features  
Plastic package has Underwriters Laborator  
111  
FlammabilityClassification 94V-0  
For surface mounted applications  
Low profile package  
SMA/DO-214AC  
0.181(4.60)  
0.161(4.10)  
Built-in strain relief  
Metal silicon junction, majoritycarrier conduction  
High surge capability  
0.108(2.75)  
0.096(2.45)  
0.063(1.60)  
0.051(1.30)  
High current capability,low forward voltage drop  
Low power loss,high effciency  
0.209(5.30)  
0.193(4.90)  
For use in low voltage high frequency inverters,free  
wheeling and polarityprotection applications  
Guardring for overvoltage protection  
0.012(0.30)  
0.006(0.15)  
111  
0.096(2.45)  
0.078(2.00)  
High temperature soldering guaranteed:250oC/10 1  
seconds at terminals  
0.059(1.50)  
0.035(0.90)  
0.008(0.20)  
0.002(0.05)  
11  
Mechanical Data  
Dimensions in inches and(millimeters)  
Case:JEDEC SMA,molded plastic over  
1111passivated chip  
Polarity: Color band denotes cathode end  
Weight: 0.064 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25oC ambient temperature unless otherwise specified  
SS  
520A  
SS  
52A  
SS  
53A  
SS  
54A  
SS  
55A  
SS  
56A 58A  
SS  
SS  
SS  
SS  
515A  
UNITS  
59A 510A  
80  
90  
63  
90  
100  
150  
200  
Maximumrecurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRWS  
VDC  
20  
30  
40  
50  
35  
50  
60  
V
V
V
56  
70  
14  
20  
21  
30  
28  
40  
42  
60  
86  
105  
200  
150  
MaximumDC blocking voltage  
80  
100  
Maximumaverage forw ord rectified current at  
5.0  
I(AV)  
IFSM  
VF  
A
A
c
TL(SEEFIG.1) (NOTE2)  
Peak forw ard surge current 8.3ms single half-  
c sine-w ave superimposed on rated load(JEDEC  
c Method)  
175  
Maximuminstantaneous forw ard voltage at  
v 5.0A(NOTE.1)  
0.55  
0.70  
0.5  
0.45  
V
0.85  
MaximumDC reverse current @TA=25oC  
IR  
mA  
at rated DC blockjing voltage(NOTE1) @TA=100oC  
20  
10  
55  
17  
Rθ  
JA  
oC/W  
Typical thermal resitance (NOTE2)  
Rθ  
JL  
oC  
oC  
Operating junction temperature range  
Storage temperature range  
TJ  
-55--- +150  
-55--- +150  
TSTG  
NOTE: 1.Pulse test:300 S pulse width,1%duty cycle  
μ
2. P.C.B.mounted with 0.55"X0.55"(14.0X14.0mm2)copper pad areas  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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