Datasheet > SS3P5L-E386A

SS3P5L-E386A

更新时间： 2024-11-20 06:13:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	91K
描述
Low VF High Current Density Surface Mount Schottky Barrier Rectifiers

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中文翻译

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SS3P5L-E386A 数据手册

New Product

SS3P5L & SS3P6L

Vishay General Semiconductor

Low V High Current Density Surface Mount

Schottky Barrier Rectifiers

FEATURES

eSMP^TMSeries

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency

• Low thermal resistance

• Meets MSL level 1, per J-STD-020C, LF max peak

of 260 °C

TO-277A (SMPC)

Anode 1

Anode 2

Cathode

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters, free-

wheeling, dc-to-dc converters and polarity protection

applications.

MAJOR RATINGS AND CHARACTERISTICS

I_F(AV)

3 A

50 V, 60 V

150 A

V_RRM

I_FSM

MECHANICAL DATA

E_AS

20 mJ

Case: TO-277A (SMPC)

V_Fat I_F= 3.0 A

T_jmax.

0.478 V

150 °C

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SS3P5L

S35

SS3P6L

S36

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (see Fig. 1)

V_RRM

I_F(AV)

3.0

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

150

Non-repetitive avalanche energy

at I_AS= 2 A, L = 10 mH, T_j= 25 °C

E_AS

Voltage rate of change (rated V_R)

dv/dt

10000

V/µs

°C

Operating junction and storage temperature range

_J,T_STG

- 55 to + 150

Document Number: 88987

Revision: 25-Jun-07

www.vishay.com

12 3 4 5

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