Datasheet > SS3P4

SS3P4

更新时间： 2024-11-20 06:13:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	87K
描述
High-Current Density Surface Mount Schottky Rectifier

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SS3P4 数据手册

SS3P4

Vishay General Semiconductor

New Product

High-Current Density Surface Mount Schottky Rectifier

FEATURES

• Very low profile - typical height of 1.0 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency

• Low thermal resistance

• Meets MSL level 1, per J-STD-020C, LF max peak

of 260 °C

• Component in accordance to RoHS 2002/95/EC

DO-220AA (SMP)

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters, free-

wheeling, dc-to-dc converters and polarity protection

applications.

MAJOR RATINGS AND CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

3 A

MECHANICAL DATA

Case: DO-220AA (SMP)

40 V

50 A

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

E_AS

11.25 mJ

0.50 V

150 °C

V_F

T_jmax.

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SS3P4

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (see Fig. 1)

V_RRM

I_F(AV)

3.0

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load

I_FSM

Non-repetitive avalanche energy at T_j= 25 °C, I_AS= 1.5 A, L = 10 mH

Voltage rate of change (rated V_R)

E_AS

11.25

10000

V/µs

°C

dv/dt

Operating junction and storage temperature range

_J,T_STG

- 55 to + 150

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP

MAX.

UNIT

Maximum instantaneous

forward voltage ⁽¹⁾

at I_F= 3 A,

T_j= 25 °C

T_j= 125 °C

0.55

0.50

0.60

0.55

V_F

Maximum reverse current at

rated V_R

T_j= 25 °C

T_j= 125 °C

150

µA

I_R

(1)

7.5

Typical junction capacitance

at 4.0 V, 1 MHz

C_J

105

Note:

(1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 15 x 15 mm copper pad areas

R_θJLis measured at the terminal of cathode band

R_θJCis measured at the top centre of the body

Document Number 88954

26-Jun-06

www.vishay.com

12 3 4

中文翻译

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与SS3P4相关器件

型号	品牌	获取价格	描述	数据表
SS3P4_08	VISHAY	获取价格	High Current Density Surface Mount Schottky Rectifier
SS3P4_11	VISHAY	获取价格	High Current Density Surface Mount Schottky Rectifiers
SS3P4_13	VISHAY	获取价格	High Current Density Surface Mount Schottky Rectifiers
SS3P4_15	VISHAY	获取价格	High Current Density Surface Mount Schottky Rectifiers
SS3P4-E3/84A	VISHAY	获取价格	High Current Density Surface Mount Schottky Rectifier
SS3P4-E3/85A	VISHAY	获取价格	High Current Density Surface Mount Schottky Rectifier
SS3P4HE3/84A	VISHAY	获取价格	High Current Density Surface Mount Schottky Rectifier
SS3P4-HE3/84A	VISHAY	获取价格	3A, 40V, SILICON, RECTIFIER DIODE, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
SS3P4HE3/85A	VISHAY	获取价格	High Current Density Surface Mount Schottky Rectifier
SS3P4HM3/84A	VISHAY	获取价格	DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-220AA, HALOGEN FREE AND ROHS COMPLIANT, PLAS

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